Document Number: 71399
S11-1066–Rev. E, 30-May-11
www.vishay.com
5
Vishay Siliconix
DG441L, DG442L
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
(Single Supply 3 V)
Test Conditions
Unless Otherwise Specified
V + = 3 V, V - = 0 V
V
IN
= 0.4 V
f
A Suffix Limits
- 55 °C to 125 °C
D Suffix Limits
- 40 °C to 85 °C
Unit
Parameter Symbol
Temp.
b
Typ.
c
Min.
d
Max.
d
Min.
d
Max.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0303V
Drain-Source
On-Resistance
R
DS(on)
V + = 2.7 V, V - = 0 V
I
S
= 5 mA, V
D
= 0.5, 2.2 V
Room
Full
65 80
115
80
100
On-Resistance Match
Between Channels
e
R
DS(on)
I
S
= 5 mA, V
D
= 2.2 V
Room 1 3 3
Switch Off
Leakage Current
g
I
S(off)
V + = 3.3 , V - = 0 V
V
D
= 1, 2 V, V
S
= 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
nA
I
D(off)
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Channel On
Leakage Current
g
I
D(on)
V + = 3.3 V, V - = 0 V
V
S
= V
D
= 1, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Digital Control
Input Current, V
IN
Low
e
I
IL
V
IN
under test = 0.4 V
Full 0.005 - 1.5 1.5 - 1 1
µA
Input Current, V
IN
High
e
I
IH
V
IN
under test = 2.4 V
Full 0.005 - 1.5 1.5 - 1 1
Dynamic Characteristics
Tu r n - O n T i m e
t
ON
R
L
= 300 , C
L
= 35 pF
V
S
= 1.5 V, see figure 2
Room
Full
50 136
175
136
151
ns
Turn-Off Time
t
OFF
Room
Full
30 100
140
100
125
Charge Injection
e
Q
V
g
= 0 V, R
g
= 0 , C
L
= 10 nF
Room 1 pC
Off Isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF , f = 1 MHz
Room 68
dB
Channel-to-Channel
Crosstalk
e
X
TALK
Room 85
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 6
pF
Drain Off Capacitance
e
C
D(off)
Room 6
Channel On Capacitance
e
C
D(on)
Room 20
