Characteristics STPS120M
2/8 DocID8632 Rev 5
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.34 x I
F(AV)
+ 0.07 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
amb
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 20 V
I
F(RMS)
Forward rms current 2 A
I
F(AV)
Average forward current, δ = 0.5, square wave T
c
= 140 °C 1 A
I
FSM
Surge non repetitive forward current t
p
= 8.3 ms sinusoidal 50 A
P
ARM
(1)
Repetitive peak avalanche power T
j
= 125 °C, t
p
= 10 µs 100 W
T
stg
Storage temperature range -65 to +150 °C
T
j
Maximum operating junction temperature
(2)
150 °C
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible
avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche
specification”.
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 20 °C/W
R
th(j-a)
(1)
Junction to ambient 250 °C/W
1. Mounted with minimum recommended pad size, PC board FR4.
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-1.33.9
µA
T
j
= 100 °C - 275 850
T
j
= 25 °C
V
R
= 10 V
-0.62.0
T
j
= 100 °C - 145 450
T
j
= 25 °C
V
R
= 5 V
-0.41.0
T
j
= 100 °C - 105 300
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
- 0.44 0.49
V
T
j
= 100 °C - 0.36 0.41
T
j
= 25 °C
I
F
= 2 A
- 0.48 0.54
T
j
= 100 °C - 0.42 0.48
1. Pulse test: t
p
= 380 µs, δ < 2%
