SIHG22N50D-GE3 Datasheet SIHG22N50D-E3, SIHG22N50D-GE3 | P1-P3

SiHG22N50D

www.vishay.com

Vishay Siliconix

S12-1459-Rev. A, 18-Jun-12

1

Document Number: 91516

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (U

IS

)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-Of-Merit (FOM): R

on

x Q

g

- Fast Switching

• Material categorization: For definitions please see

www.vishay.com/doc?99912

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding, Induction Heating, Motor Drives

• Battery Chargers

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.3 mH, R

g

= 25 , I

AS

= 11 A.

c. 1.6 mm from case.

d. I

SD

 I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 550

R

DS(on)

max. at 25 °C ()V

GS

= 10 V 0.230

Q

g

max. (nC) 98

Q

gs

(nC) 13

Q

gd

(nC) 22

Configuration Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SiHG22N50D-E3

Lead (Pb)-free and Halogen-free

SiHG22N50D-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage

V

DS

500

V

Gate-Source Voltage

V

GS

± 30

Gate-Source Voltage AC (f > 1 Hz) 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

22

AT

C

= 100 °C 14

Pulsed Drain Current

a

I

DM

67

Linear Derating Factor 2.5 W/°C

Single Pulse Avalanche Energy

b

E

AS

139 mJ

Maximum Power Dissipation P

D

312 W

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dt

d

0.38

Soldering Recommendations (Peak Temperature) for 10 s 300

c

°C

SiHG22N50D

www.vishay.com

Vishay Siliconix

S12-1459-Rev. A, 18-Jun-12

2

Document Number: 91516

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain)

R

thJC

-0.4

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 500 - - V

V

DS

Temperature Coefficient

V

DS

/T

J

Reference to 25 °C, I

D

= 250 μA

-0.6-

V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3 - 5 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 500 V, V

GS

= 0 V - - 1

μA

V

DS

= 400 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 11 A - 0.185 0.230 

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 11 A - 8 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 1938 -

pF

Output Capacitance C

oss

- 169 -

Reverse Transfer Capacitance C

rss

-18-

Effective Output Capacitance, Energy

C

o(er)

V

DS

= 0 V to 400 V, V

GS

= 0 V

- 144 -

Effective Output Capacitance, Time

C

o(tr)

- 210 -

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 11 A, V

DS

= 400 V

-4998

nC Gate-Source Charge Q

gs

-13-

Gate-Drain Charge Q

gd

-22-

Turn-On Delay Time t

d(on)

V

DD

= 380 V, I

D

= 11 A,

V

GS

= 10 V, R

g

= 4.7 

-2142

ns

Rise Time t

r

-4284

Turn-Off Delay Time t

d(off)

-4794

Fall Time t

f

-4080

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.4 - 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--22

A

Pulsed Diode Forward Current I

SM

--88

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 11 A, V

GS

= 0 V - - 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 11 A,

dI/dt = 100 A/μs, V

R

= 20 V

- 384 - ns

Reverse Recovery Charge Q

rr

-4.7-μC

Reverse Recovery Current I

RRM

-23-A

S

D

G

SiHG22N50D

www.vishay.com

Vishay Siliconix

S12-1459-Rev. A, 18-Jun-12

3

Document Number: 91516

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

20

40

60

80

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

5V

0 5 10 15 20 25 30

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

01020

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

5 V

T

J

= 150 °C

5152530

0

10

20

30

40

50

0

20

40

60

80

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

010 2551520

T

J

= 25 °C

T

J

= 150 °C

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

2.5

0.5

- 60

3

2

1.5

1

0

- 40 - 20

0

20 40 60 80 100 120

140

160

V

GS

= 10 V

I

D

= 11 A

On Resistance (Normalized)

V

DS

, Drain-to-Source Voltage (V)

Capacitance (pF)

100

10

0 200

400

10 000

1

1000

100 300

500

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

Q

g

, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0 40 100

0

24

V

DS

= 400 V

V

DS

= 250 V

V

DS

= 100 V

20

12

8

20 60 80

SIHG22N50D-GE3

SIHG22N50D-GE3

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