RN1910FE,RN1911FE
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN1910FE, RN1911FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
• Complementary to RN2910FE, RN2911FE
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
100 mA
Collector power dissipation P
C
(Note 1) 100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
Equivalent Circuit
(top view)
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2N1G
Weight: 0.003 g (typ.)
R1
B
C
E
6 5 4
1 2 3
Q1
Q2
Start of commercial production
2000-05
