EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
2
Specifications
J
RATINGS
Item Diffuse
EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC
Supply voltage 5to12VDC±10%, ripple (p-p): 10% max. 5to15VDC±10%, ripple (p-p): 10% max.
Current consumption 36 mA max. 48 mA max. (DC current: I
F
=25mA)
Maximum forward direct current (I
F
) — 30 mA max.
Forward voltage (V
F
) — 1.5 V max. (I
F
=30mA)
Reverse voltage (V
R
) — 4Vmax.
Standard reference object White paper with reflection factor of 90% (standard sensing object: 15 x 15 mm)
Differential distance 0.1 mm
Control output At 5 to 24 VDC: 80-mA load current (I
C
) with a residual voltage of 0.8 V max.
When driving TTL: 40-mA load current (I
C
) with a residual voltage of 0.4 V max.
Output
configuration
Transistor on output stage
without detecting object
OFF ON OFF ON
Transistor on output stage
with detecting object
ON OFF ON OFF
Response frequency (See note) 50 Hz
Connecting method EE-1001/1006 Connectors; soldering terminals/cordset
Light source GaAs infrared LED with a peak wavelength of 940 nm
Receiver Si photo-transistor with a sensing wavelength of 850 nm max.
Note: The response frequency was measured by detecting the following disks rotating.
Disk
15 mm
15 mm
15 mm
5mm
200 mm
dia.
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CHARACTERISTICS
Ambient temperature
Operating -25
°
Cto55
°
C(-13
°
F to 131
°
F)
Storage -30
°
Cto80
°
C(-22
°
F to 176
°
F)
Ambient humidity
Operating 45% to 85%
Storage 35% to 95%
Vibration resistance Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for
4 min each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s
2
for 3 times each in X, Y, and Z directions
Soldering heat resistance 260
°±
5
°
C (See Note.) when the portion between the tip of the terminals and the position
1.5 mm from the terminal base is dipped into the solder for 10
±
1 seconds
Note: This conforms to MIL-STD-750-2031-1.
