SIRA52ADP-T1-RE3 Datasheet SIRA52ADP-T1-RE3 | P1-P3

SiRA52ADP

www.vishay.com

Vishay Siliconix

S18-0480-Rev. A, 30-Apr-2018

1

Document Number: 76609

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 40 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• Tuned for the lowest R

DS

-Q

oss

FOM

• 100 % R

g

and UIS tested

•Q

gd

/Q

gs

ratio < 1 optimizes switching

characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters

• Battery and load switch

Notes

a. T

C

= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnectio

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless component

f. Maximum under steady state conditions is 70 °C/W

PRODUCT SUMMARY

V

DS

(V) 40

R

DS(on)

max. () at V

GS

= 10 V 0.00163

R

DS(on)

max. () at V

GS

= 4.5 V 0.00230

Q

g

typ. (nC) 32

I

D

(A)

a

131

Configuration Single

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package PowerPAK SO-8

Lead (Pb)-free and halogen-free SiRA52ADP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

40

V

Gate-source voltage V

GS

+20, -16

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

131

A

T

C

= 70 °C 105

T

A

= 25 °C 41.6

b, c

T

A

= 70 °C 33.3

b, c

Pulsed drain current (t = 100 μs) I

DM

200

Continuous source-drain diode current

T

C

= 25 °C

I

S

43.6

T

A

= 25 °C 4.3

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

35

Single pulse avalanche energy E

AS

61 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

48

W

T

C

= 70 °C 30.7

T

A

= 25 °C 4.8

b, c

T

A

= 70 °C 3

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b, f

t  10 s R

thJA

22 26

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

1.7 2.6

SiRA52ADP

www.vishay.com

Vishay Siliconix

S18-0480-Rev. A, 30-Apr-2018

2

Document Number: 76609

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 40 - - V

V

DS

temperature coefficient V

DS

/T

J

I

D

= 250 μA

-22-

mV/°C

V

GS(th)

temperature coefficient V

GS(th)

/T

J

--5.8-

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.1 - 2.4 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +20, -16 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 40 V, V

GS

= 0 V - - 1

μA

V

DS

= 40 V, V

GS

= 0 V, T

J

= 55 °C - - 10

On-state drain current

a

I

D(on)

V

DS

 5 V, V

GS

= 10 V 30 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 15 A - 0.00130 0.00163



V

GS

= 4.5 V, I

D

= 10 A - 0.00190 0.00230

Forward transconductance

a

g

fs

V

DS

= 10 V, I

D

= 15 A - 98 - S

Dynamic

b

Input capacitance C

iss

V

DS

= 20 V, V

GS

= 0 V, f = 1 MHz

- 5500 -

pFOutput capacitance C

oss

- 1086 -

Reverse transfer capacitance C

rss

-67-

C

rss

/C

iss

ratio -0.013-

Total gate charge Q

g

V

DS

= 20 V, V

GS

= 10 V, I

D

= 10 A - 66 100

nCV

DS

= 20 V, V

GS

= 4.5 V, I

D

= 10 A

-3260

Gate-source charge Q

gs

-15-

Gate-drain charge Q

gd

-4.5-

Output charge Q

oss

V

DS

= 20 V, V

GS

= 0 V - 50 75

Gate resistance R

g

f = 1 MHz 0.4 1.1 2.0 

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 2 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

-1734

ns

Rise time t

r

-612

Turn-off delay time t

d(off)

-3876

Fall time t

f

-612

Turn-on delay time t

d(on)

V

DD

= 20 V, R

L

= 2 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

-4080

Rise time t

r

-67134

Turn-off delay time t

d(off)

-3672

Fall time t

f

-1122

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - 43.6

A

Pulse diode forward current (t = 100 μs) I

SM

--200

Body diode voltage V

SD

I

S

= 5 A - 0.71 1.1 V

Body diode reverse recovery time t

rr

I

F

= 10 A, di/dt = 100 A/μs,

T

J

= 25 °C

- 50 100 ns

Body diode reverse recovery charge Q

rr

- 56 112 nC

Reverse recovery fall time t

a

-30-

ns

Reverse recovery rise time t

b

-20-

SiRA52ADP

www.vishay.com

Vishay Siliconix

S18-0480-Rev. A, 30-Apr-2018

3

Document Number: 76609

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

10

100

1000

10000

0

30

60

90

120

150

00.511.522.5

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

2nd line

V

GS

= 10 V thru 4 V

V

GS

= 2 V

V

GS

= 3 V

10

100

1000

10000

0

0.0006

0.0012

0.0018

0.0024

0.003

0 20406080100

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

2nd line

V

GS

= 4.5 V

V

GS

= 10 V

10

100

1000

10000

0

2

4

6

8

10

0 1428425670

Axis Title

1st line

2nd line

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

2nd line

V

DS

= 10 V, 20 V, 30 V

I

D

= 10 A

10

100

1000

10000

0

50

100

150

200

250

012345

Axis Title

1st line

2nd line

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

2nd line

T

C

= 25 °C

T

C

=-55 °C

T

C

= 125 °C

10

100

1000

10000

0

1200

2400

3600

4800

6000

0 8 16 24 32 40

Axis Title

1st line

2nd line

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

2nd line

C

rss

C

oss

C

iss

10

100

1000

10000

0.7

0.9

1.1

1.3

1.5

1.7

-50-25 0 255075100125150

Axis Title

1st line

2nd line

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

2nd line

I

D

= 15 A

V

GS

= 10 V

V

GS

= 4.5 V

SIRA52ADP-T1-RE3

SIRA52ADP-T1-RE3

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