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PMEG3020BEP,115

P1-P3P4-P6P7-P9P10-P12P13-P14
PMEG3020BEP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 October 2009 3 of 13
NXP Semiconductors
PMEG3020BEP
2 A low V
F
MEGA Schottky barrier rectifier
[1] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[2] T
j
=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[6] Soldering point of cathode tab.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
[3]
- - 200 K/W
[4]
- - 120 K/W
[5]
--60K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[6]
--12K/W
PMEG3020BEP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 October 2009 4 of 13
NXP Semiconductors
PMEG3020BEP
2 A low V
F
MEGA Schottky barrier rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab778
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
006aab779
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
PMEG3020BEP_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 October 2009 5 of 13
NXP Semiconductors
PMEG3020BEP
2 A low V
F
MEGA Schottky barrier rectifier
7. Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab780
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
1
10
2
Z
th(j-a)
(K/W)
10
−1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
= 0.1 A - 290 340 mV
I
F
= 0.5 A - 340 400 mV
I
F
= 1 A - 365 420 mV
I
F
= 1.5 A - 385 440 mV
I
F
= 2 A - 400 450 mV
I
R
reverse current V
R
=5V - 4 - µA
V
R
=10V - 6 - µA
V
R
= 30 V - 35 100 µA
C
d
diode capacitance f=1MHz
V
R
= 1 V - 340 - pF
V
R
= 10 V - 120 - pF
P1-P3P4-P6P7-P9P10-P12P13-P14

PMEG3020BEP,115

Mfr. #:
Buy PMEG3020BEP,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers 2A MEGA SCHOTTKY BARRIER RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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