©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSP24
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 40 V
V
CEO
Collector-Emitter Voltage 30 V
I
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation (T
a
=25°C) 350 mW
Derate Above 25°C2.8mW/°C
T
J
Junction Temperature 135 °C
T
STG
Storage Temperature -55~150 °C
R
TH
(j-a) Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 40 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 30 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 4.0 V
I
CBO
Collector Cut-off Current V
CB
=15V, I
E
=0 50 nA
h
FE
DC Current Gain V
CE
=10V, I
C
=8mA 30
f
T
Current Gain Bandwidth Product V
CE
=10V, I
C
=8mA,
f=100MHz
400 620 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 0.25 0.36 pF
G
CE
Conversion Gain (213 to 45MHz) V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
19 24 dB
G
CE
Conversion Gain (60 to 45MHz) V
CC
=20V, I
C
=8mA
Oscillator Injection=150mV
24 29 dB
KSP24
VHF Transistor
1. Base 2. Emitter 3. Collector
TO-92
1
