VKM60-01P1

© 2005 IXYS All rights reserved
1 - 4
VKM 60-01P1
515
I
D25
= 75 A
V
DSS
= 100 V
R
DSon
= 25 m
t
rr
< 200 ns
HiPerFET
TM
Power MOSFET
H-Bridge Topology in ECO-PAC 2
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
MOSFETs
Symbol Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 100 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M 100 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
300 A
I
AR
T
C
= 25°C 75 A
E
AR
T
C
= 25°C 30 mJ
dv/dt I
S
I
DM
, di/dt 100 A/µs, V
DD
V
DSS
, 5 V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25°C 300 W
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 µA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.0 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 • V
DSS
; T
J
= 25°C 250 µA
V
GS
= 0 V; T
J
= 125°C 1 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
25 m
Pulse test, t < 300 µs, duty cycle d < 2%
g
fs
V
DS
= 10 V; I
D
= I
D25
, pulse test 25 30 S
C
iss
4500 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1600 pF
C
rss
800 pF
t
d(on)
20 30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
60 110 ns
t
d(off)
R
G
= 2 Ω, (External) 80 110 ns
t
f
60 90 ns
Q
g(on)
180 260 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
36 70 nC
Q
gd
85 160 nC
R
thJC
0.5 K/W
R
thCK
with heatsink compound (0.42 K/m.K; 50 µm) 0.25 K/W
Features
• HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ECO-PAC 2 package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- solderable pins for PCB mounting
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
supplies
IXYS reserves the right to change limits,
test conditions and dimensions.
Pin arangement see outlines
L 4
L 9
P 18
R 18
X 15
T 18
V 18
A1
E10
F10
K10
K 12
K 13
NTC
L 6
X 18
© 2005 IXYS All rights reserved
2 - 4
VKM 60-01P1
515
Module
Symbol Conditions Maximum Ratings
T
VJ
-40...+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
1 mA; 50/60 Hz; t = 1 s 3600 V~
M
d
mounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
a Max. allowable acceleration 50 m/s
2
Symbol Conditions Characteristic Values
min. typ. max.
d
S
Creepage distance on surface (Pin to heatsink) 11.2 mm
d
A
Strike distance in air (Pin to heatsink) 11.2 mm
Weight 24 g
Source-Drain Diode
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
I
S
V
GS
= 0 V 75 A
I
SM
Repetitive; 300 A
V
SD
I
F
= I
D25
, V
GS
= 0 V, 1.75 V
Pulse test, t < 300 µs, duty cycle d < 2%
t
rr
I
F
= 25 A, -di/dt = 100 A/µs, T
J
= 25°C 200 ns
V
R
= 25 V T
J
= 125°C 300 ns
IXYS reserves the right to change limits, test conditions and dimensions.
Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated
Dimensions in mm (1 mm = 0.0394")
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R
25
T = 25°C 4.75 5.0 5.25 k
B
25/50
3375 K
© 2005 IXYS All rights reserved
3 - 4
VKM 60-01P1
515
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 15
0
BV/V
G(th)
- Normalized
0,5
0,6
0,7
0,8
0,9
1,0
1,1
1,2
V
GS(th)
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
0
20
40
60
80
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 15
0
R
DS(on)
- Normalized
0,50
0,75
1,00
1,25
1,50
1,75
2,00
2,25
2,50
I
D
- Amperes
0 20 40 60 80 100 120 140 160
0,8
0,9
1,0
1,1
1,2
1,3
1,4
V
GS
= 10V
V
GS
= 15V
V
GS
- Volts
012345678910
I
D
- Amperes
0
25
50
75
100
125
150
T
J
= 125°C
V
DS
- Volts
0,00,51,01,52,02,53,03,54,04,55,0
0
50
1
00
1
50
2
00
8V
5V
V
GS
= 10V
9V
7V
6V
T
J
= 25°C
I
D
= 37.5A
BV
DSS
T
J
= 25°C
T
J
= 25°C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Case Temperature Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage

VKM60-01P1

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules MOSFET H-BRIDGE 100V 63 AMP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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