IXGP50N60C4 Datasheet IXGA50N60C4, IXGH50N60C4, IXGP50N60C4 | P1-P3

IXGA50N60C4

IXGP50N60C4

IXGH50N60C4

V

CES

= 600V

I

C110

= 46A

V

CE(sat)

≤ ≤

≤

2.3V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C 90 A

I

C110

T

C

= 110°C 46 A

I

CM

T

C

= 25°C, 1ms 220 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 10Ω I

CM

= 72 A

(RBSOA) Clamped Inductive Load V

CE

≤ V

CES

P

C

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

M

d

Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100298C(10/11)

G = Gate D = Collector

S = Emitter Tab = Collector

TO-247 (IXGH)

G

E

C

C (Tab)

TO-263 AA (IXGA)

G

E

C (Tab)

G

C

E

TO-220AB (IXGP)

C (Tab)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

4.0 6.5 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 μA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 36A, V

GE

= 15V, Note 1 1.9 2.3 V

T

J

= 125°C 1.6 V

High-Gain IGBTs

High-Speed PT Trench IGBT

Features

z

Optimized for Low Switching Losses

z

International Standard Packages

z

Square RBSOA

Advantages

z

Easy to Mount

z

Space Savings

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Lamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA50N60C4 IXGP50N60C4

IXGH50N60C4

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitter

TO-263 Outline

Pins: 1 - Gate 2 - Drain

TO-220 Outline

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

1 = Gate 2 = Collector

3 = Emitter

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 36A, V

CE

= 10V, Note 1 20 30 S

C

ie

s

1900 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 100 pF

C

res

60 pF

Q

g

113 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

13 nC

Q

gc

44 nC

t

d(on)

40 ns

t

ri

66 ns

E

on

0.95 mJ

t

d(off)

270 ns

t

fi

63 ns

E

of

f

0.84 1.55 mJ

t

d(on)

30 ns

t

ri

45 ns

E

on

1.10 mJ

t

d(off)

210 ns

t

fi

96 ns

E

off

0.90 mJ

R

thJC

0.42 °C/W

R

thCS

TO-247 0.21 °C/W

TO-220 0.50 °C/W

Inductive Load, T

J

= 125°C

I

C

= 36A, V

GE

= 15V

V

CE

= 400V, R

G

= 10Ω

Note 2

Inductive Load, T

J

= 25°C

I

C

= 36A, V

GE

= 15V

V

CE

= 400V, R

G

= 10Ω

Note 2

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

IXGA50N60C4 IXGP50N60C4

IXGH50N60C4

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

9V

7V

8V

6V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

9V

10V

12V

14V

13V

8V

11V

7V

6V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

70

80

90

100

0 0.5 1 1.5 2 2.5 3

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

10V

8V

9V

7V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 36A

I

C

= 18A

I

C

= 72A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 72

A

T

J

= 25ºC

36

A

18

A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGP50N60C4

IXGP50N60C4

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