VBO40-08NO6
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.15
R 1.3 K/W
R
min.
40
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
115
P
tot
95 WT = 25°C
C
R K/W
20
800
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.33
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
150
r
F
12.1
mΩ
V1.07T = °C
VJ
I = A
F
V
20
1.31
I = A
F
40
I = A
F
40
threshold voltage
slope resistance
for power loss calculation only
µA
125
V
RRM
V800
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
11
unction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
320
345
365
360
A
A
A
A
270
295
510
495
800
DAV
d =rectangular 0.5
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
900
0.10
IXYS reserves the right to change limits, conditions and dimensions.
20130517bData according to IEC 60747and per semiconductor unless otherwise specified
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