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TK2Q60D(Q)

P1-P3P4-P6
TK2Q60D
2015-11-28
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2Q60D
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
= 3.2 Ω(typ.)
• High forward transfer admittance: |Y
fs
| = 1.0 S (typ.)
• Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 600 V)
• Enhancement mode: V
th
= 2.4 to 4.4 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
Drain current
DC (Note 1) I
D
2
A
Pulse (Note 1) I
DP
8
Drain power dissipation (Tc = 25°C)
P
D
60 W
Single pulse avalanche energy
(Note 2)
E
AS
101 mJ
Avalanche current I
AR
2 A
Repetitive avalanche energy (Note 3) E
AR
6.0 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.08 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C(initial), L = 44.1 mH, R
G
= 25 Ω, I
AR
= 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
2.3
1.1 ±
0.2
0.9
0.6 ± 0.15
5.2 ± 0.2
2.3
1.5 ± 0.2
6.5 ± 0.2
1 2 3
0.6 MAX.
5.5 ± 0.2
2.3 ± 0.2
0.6 ± 0.15
5.7
1.6
4.1 ± 0.2
0.8 MAX.
1.1 MAX.
1. GATE
2. DRAIN（HEAT SINK）
3. SOURCE
JEDEC ―
JEITA ―
TOSHIBA 2-7J2B
Weight: 0.36 g (typ.)
1
3
2
Start of commercial production
2009-03
TK2Q60D
2015-11-28
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ― ― ±1 μA
Drain cut-off current I
DSS
V
DS
= 600 V, V
GS
= 0 V ― ― 10 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 ― ― V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.4 ― 4.4 V
Drain-source ON resistance R
DS (ON)
V
GS
= 10 V, I
D
=1 A ― 3.2 4.3 Ω
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
=1 A 0.3 1.0 ― S
Input capacitance C
iss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
― 280 ―
pF Reverse transfer capacitance C
rss
― 1.5 ―
Output capacitance C
oss
―
30 ―
Switching time
Rise time t
r
Duty ≤ 1%, t
w
= 10 μs
― 15 ―
ns
Turn-on time t
on
― 35 ―
Fall time t
f
― 7 ―
Turn-off time t
off
― 55 ―
Total gate charge Q
g
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 2 A
―
7
―
nC
Gate-source charge Q
gs
―
4
―
Gate-drain charge Q
gd
―
3
―
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
― ― ― 2 A
Pulse drain reverse current (Note 1) I
DRP
― ― ― 8 A
Forward voltage (diode) V
DSF
I
DR
= 2 A, V
GS
= 0 V ― ― −1.7 V
Reverse recovery time t
rr
I
DR
= 2 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
― 550 ― ns
Reverse recovery charge Q
rr
― 2.2 ― μC
Marking
K2Q60D
Lot No.
Note 4
Part No.
(or abbreviation code)
Note
4 : A line under a Lot No. identifies the indication of product Labels
`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOS
HIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 20
11/65/EU of the European Parliament and
of the Council of
8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
R
L
=
200
Ω
0 V
10 V
V
GS
V
DD
≈
200 V
I
D
=
1 A
V
OUT
50 Ω
TK2Q60D
2015-11-28
3
Tc = −55°C
25
100
10
8
8.5
7.5
V
GS
= 6 V
7
6.5
8
7
7.5
7.3
V
GS
= 5.5 V
6.5
6
10
0.1
10
0.1 10
1
1
0
20
4
8
16
4 0
20
12 16
12
8
1
0.5
I
D
= 2 A
0
4
0.8
1.6
3.2
2
0 10
6 8
2.4
4
100
25
Tc = −55°C
0
4
0.8
2.4
1.6
3.2
10 0
50
20 30 40
0
2
0.4
1.2
0.8
1.6
2 0
10
4 6 8
I
D
– V
DS
Drain current I
D
(A)
Drain−source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain−source voltage V
DS
(V)
Common source
Tc = 25°C
Pulse test
I
D
– V
GS
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
V
DS
– V
GS
Drain−
source voltage V
DS
(V)
Gate−source voltage V
GS
(V)
|Y
fs
| − I
D
Forward transfer admittance
|Y
fs
| (S)
Drain current I
D
(A)
R
DS (ON)
− I
D
Drain−source ON-resistance
R
DS (ON)
(Ω)
Drain current I
D
(A)
Common source
V
DS
= 20 V
Pulse test
Common source
V
DS
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
9
100
10
V
GS
= 10 V
1
1
10
0.1
Common source
Tc = 25°C
Pulse test
P1-P3P4-P6

TK2Q60D(Q)

Mfr. #:
Buy TK2Q60D(Q)
Manufacturer:
Toshiba
Description:
MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm
Lifecycle:
New from this manufacturer.
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