BD244CG

© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1 Publication Order Number:
BD243B/D
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
High Current Gain Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
V
CEO
80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
V
CB
80
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
6 Adc
Collector Current − Peak I
CM
10 Adc
Base Current I
B
2.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
65
0.52
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.92 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
www.onsemi.com
MARKING DIAGRAM
BD24xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
BD24xyG
AY WW
TO−220
CASE 221A
STYLE 1
1
2
3
4
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
Device Package Shipping
ORDERING INFORMATION
BD243BG TO−220
(Pb−Free)
50 Units / Rail
BD243CG TO−220
(Pb−Free)
50 Units / Rail
BD244BG TO−220
(Pb−Free)
50 Units / Rail
BD244CG TO−220
(Pb−Free)
50 Units / Rail
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
BD243B, BD244B
BD243C, BD244C
V
CEO(sus)
80
100
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
BD243B, BD243C, BD244B, BD244C
I
CEO
0.7
mAdc
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB
= 0)
BD243B, BD244B
(V
CE
= 100 Vdc, V
EB
= 0)
BD243C, BD244C
I
CES
400
400
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
h
FE
30
15
Collector−Emitter Saturation Voltage
(I
C
= 6.0 Adc, I
B
= 1.0 Adc)
V
CE(sat)
1.5
Vdc
Base−Emitter On Voltage
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
3.0
MHz
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth 300 ms, Duty Cycle 2.0%.
2. f
T
= h
fe
f
test
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
www.onsemi.com
3
Figure 2. Switching Time Test Circuit
2.0
0.06
Figure 3. Turn−On Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
1.0
0.7
0.5
0.3
0.1
0.07
0.02
0.1 0.2 0.4 0.6 2.0 6.0
t
d
@ V
BE(off)
= 5.0 V
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
+ 11 V
0
V
CC
- 30 V
SCOPE
R
B
- 4 V
t
r
, t
f
v 10 ns
DUTY CYCLE = 1.0%
R
C
t
r
0.03
0.05
1.0 4.0
D
1
MUST BE FAST RECOVERY TYPE eg.
1N5825 USED ABOVE I
B
[ 100 mA
MSD6100 USED BELOW I
B
[ 100 mA
25 ms
- 9.0 V
D
1
51
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.2
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
R
q
JC(max)
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03 0.3 3.0 30 300
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
CURVES APPLY BELOW RATED V
CEO
10
5.0
Figure 5. Active Region Safe Operating Area
5.0
1.0
0.1
10 20 60 100
T
J
= 150°C
BD243B, BD244B
BD243C, BD244C
5.0 ms
0.5 ms
0.2
2.0
0.5
I
C
, COLLECTOR CURRENT (AMP)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
0.3
40 80
1.0
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C: T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150°C, T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.

BD244CG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 6A 100V 65W PNP
Lifecycle:
New from this manufacturer.
Delivery:
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