FGS15N40LTF Datasheet FGS15N40LTF | P1-P3

September 2001

FGS15N40L Rev. A1

IGBT

FGS15N40L

General Description

Insulated Gate Bipolar Transistors(IGBTs) with trench

gate structure have superior performance in conductance

and switching to planar gate structure and also have wide

noise immunity. These devices are well suitable for

strobe application

Features

• High Input Impedance

• High Peak Current Capability (130A)

• Easy Gate Drive

Absolute Maximum Ratings T

C

= 25°C unless otherrwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Notes: Mounted on 1” square PCB(FR4 or G-10 Material)

Symbol Description FGS15N40L Units

V

CES

Collector-Emitter Voltage 400 V

V

GES

Gate-Emitter Voltage ± 6V

I

CM (1)

Pulsed Collector Current 130 A

P

C

M a x i m u m P o w e r D i s s i p a t i o n @ T

a

= 25°C2.0 W

T

J

Operating Junction Temperature -40 to +150 °C

T

stg

Storage Temperature Range -40 to +150 °C

T

L

Maximum Lead Temp. for soldering

PurPoses from case for 5 secnds

300 °C

Symbol Parameter Typ. Max. Units

R

θJA

Thermal Resistance, Junction-to-Ambient(PCB Mount) -- 62.5 °C/W

Application

• Strobe Flash

G

C

E

G

C

8-SOP

FGS15N40L

Electrical Characteristics of IGBT T

C

= 25°C unless otherwise noted

Notes : Recommendation of Rg Value : Rg ≥15Ω

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

Collector-Emitter Breakdown Voltage V

GE

= 0V, I

C

= 1mA 450 -- -- V

I

CES

Collector Cut-off Current V

CE

= V

CES

, V

GE

= 0V -- -- 10 µA

I

GES

G-E leakage Current V

GE

= V

GES

, V

CE

= 0V -- -- ± 0.1 µA

On Characteristics

V

GE(th)

G-E threshold Voltage I

C

= 0V, I

C

= 1mA - - 1.4 V

V

CE(sat)

C-E Saturation Voltage I

C

= 130A , V

GE

= 4.0V 2.0 4.5 8.0 V

Dynamic Characteristics

C

ies

Input Capacitance

V

GE

= 0V , V

CE

= 30V

f = 1MHz

-- 3800 -- pF

C

oes

Output Capacitance -- 45 -- pF

C

res

Reverse Transfer Capacitance -- 30 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 300V , I

C

= 130A

V

GE

= 4.0V , R

G

= 15Ω *

Resistive Load

-- 0.15 -- us

t

r

Rise Time -- 1.5 -- us

t

d(off)

Turn-Off Delay Time -- 0.15 0.3 us

t

f

Fall Time -- 1.5 3.0 us

FGS15N40L

Fig 2. Saturation Voltage vs. Case Temerature

at Variant Current Level

Fig 1. Typical Output Chacracteristics

Fig 3. Saturation Voltage vs. V

GE

Fig 4. Saturation Voltage vs. V

GE

Fig 5. Saturation Voltage vs. V

GE

Fig 6. Capacitance Characteristics

-50 0 50 100 150

2

3

4

5

6

7

Common Emitter

V

GE

=4.0V

Ic=130A

Ic=100A

Ic=70A

Collector-Emitter Voltage, Vce[v]

Case Temperature,T

C

[

℃

]

0123456

0

2

4

6

8

10

130A

100A

I

C

=70A

Common Emitter

T

C

=-40

℃

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage ,V

GE

[V]

0123456

0

2

4

6

8

10

130A

100A

I

C

=70A

Common Emitter

T

C

=25

℃

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage ,V

GE

[V]

0123456

0

2

4

6

8

10

130A

100A

I

C

=70A

Common Emitter

T

C

=150

℃

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage ,V

GE

[V]

0 10203040

10

100

1000

10000

Common Emitter

V

GE

=0V f=1MHz T

C

=25

℃

Cres

Coes

Cies

Capacitance [pF]

Collector-Emitter Voltage,V

CE

[V]

02468

0

30

60

90

120

150

180

6V

4V

5V

V

GE

= 3V

Commom Emitter

T

C

= 25

℃

Collector Current, I

C

[A]

Collector-Emitter Voltage, V

CE

[V]

FGS15N40LTF

FGS15N40LTF

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