SQJ560EP
www.vishay.com
Vishay Siliconix
S18-0386-Rev. A, 09-Apr-18
4
Document Number: 76266
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
20
40
60
80
100
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
10
100
1000
10000
0
20
40
60
80
100
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
320
640
960
1280
1600
0 1224364860
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0
20
40
60
80
100
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
0.00
0.01
0.02
0.03
0.04
0.05
0 1836547290
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
V
DS
= 30 V
I
D
= 10 A
SQJ560EP
www.vishay.com
Vishay Siliconix
S18-0386-Rev. A, 09-Apr-18
5
Document Number: 76266
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area
10
100
1000
10000
0.4
0.7
1.0
1.3
1.6
1.9
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 10 A
V
GS
= 10 V
V
GS
=4.5 V
10
100
1000
10000
0.000
0.012
0.024
0.036
0.048
0.060
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125°C
66
68
70
72
74
76
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.5 0.7 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
T
J
= 25 °C
-1.00
-0.70
-0.40
-0.10
0.20
0.50
-50 -25 0 25 50 75 100 125 150 175
2nd line
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
2nd line
I
D
= 250 µA
I
D
= 5 mA
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Limited by R
DS(on)
*
1 ms
I
DM
limited
T
C
= 25 °C
single pulse
BVDSS limited
10 ms
100 μs
100 ms, 1 s,
10 s, DC
I
D
limited
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
SQJ560EP
www.vishay.com
Vishay Siliconix
S18-0386-Rev. A, 09-Apr-18
6
Document Number: 76266
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
10
-3
10
-2
1
1
0
600
10
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
th
JA
(t
)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
P
DM
10
100
1000
10000
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2

SQJ560EP-T1_GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds -/+20V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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