AON6718L
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V
0.025 0.1
T
J
=125°C
20
I
GSS
0.1
A
V
GS(th)
Gate Threshold Voltage 1.3 1.8 2.2 V
I
D(ON)
160 A
3.1 3.7
T
J
=125°C
4.3 5.2
4.1 5
m
g
FS
87 S
V
SD
0.4 0.7 V
I
S
40 A
C
iss
2975 3719 4463 pF
C
oss
485 693 900 pF
C
rss
204 340 476 pF
R
g
0.28 0.56 0.84 Ω
Q
g
(10V)
48 60 72 nC
Q
g
(4.5V)
20 25 30 nC
Q
gs
12 15 18 nC
Q
gd
61014nC
t
D(on)
9.2 ns
t
r
10.7 ns
t
D(off)
40 ns
t
f
12.5 ns
t
rr
10 13
16 ns
Q
rr
21 26.5
32
nC
Rev2: Oct-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
mA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
