CY621472E30LL-45ZSXIT

CY621472E30 MoBL
®
Document Number: 001-67798 Rev. *F Page 7 of 16
Switching Characteristics
Over the Operating Range
Parameter
[14]
Description
45 ns
Unit
Min Max
Read Cycle
t
RC
Read cycle time 45 ns
t
AA
Address to data valid 45 ns
t
OHA
Data hold from address change 10 ns
t
ACE
CE
1
LOW/CE
2
HIGH to data valid 45 ns
t
DOE
OE LOW to data valid 22 ns
t
LZOE
OE LOW to Low Z
[15]
5 ns
t
HZOE
OE HIGH to High Z
[15, 16]
18 ns
t
LZCE
CE
1
LOW/CE
2
HIGH to Low Z
[15]
10 ns
t
HZCE
CE
1
HIGH/CE
2
LOW to High Z
[15, 16]
18 ns
t
PU
CE
1
LOW/CE
2
HIGH to Power-up 0 ns
t
PD
CE
1
HIGH/CE
2
LOW to Power-down 45 ns
t
DBE
BLE/BHE LOW to data valid 45 ns
t
LZBE
BLE/BHE LOW to Low Z
[15, 17]
5 ns
t
HZBE
BLE/BHE HIGH to High Z
[15, 16]
18 ns
Write Cycle
[18, 19]
t
WC
Write cycle time 45 ns
t
SCE
CE
1
LOW/CE
2
HIGH to Write End 35 ns
t
AW
Address setup to write end 35 ns
t
HA
Address hold from write end 0 ns
t
SA
Address setup to write start 0 ns
t
PWE
WE pulse width 35 ns
t
BW
BLE/BHE LOW to write end 35 ns
t
SD
Data setup to write end 25 ns
t
HD
Data hold from write end 0 ns
t
HZWE
WE LOW to High Z
[15, 16]
18 ns
t
LZWE
WE HIGH to Low Z
[15]
10 ns
Notes
14. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1 V/ns) or less, timing reference levels of V
CC(typ)
/2, input
pulse levels of 0 to V
CC(typ)
, and output loading of the specified I
OL
/I
OH
as shown in the Figure 2 on page 5.
15. At any temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZBE
is less than t
LZBE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
16. t
HZOE
, t
HZCE
, t
HZBE
, and t
HZWE
transitions are measured when the outputs enter a high impedance state.
17. If both byte enables are together, this value is 10 ns.
18. The internal write time of the memory is defined by the overlap of WE
, CE
= V
IL
, BHE, BLE, or both = V
IL
. All signals must be active to initiate a write and any of these
signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
19. The minimum write cycle pulse width for WRITE Cycle 4 (WE
controlled, OE LOW) should be equal to the sum of t
HZWE
and t
SD
.
CY621472E30 MoBL
®
Document Number: 001-67798 Rev. *F Page 8 of 16
Switching Waveforms
Figure 4. Read Cycle No. 1 (Address Transition Controlled)
[20, 21]
Figure 5. Read Cycle No. 2 (OE Controlled)
[21, 22, 23]
CY621472E30 MoBL
®
Document Number: 001-67798 Rev. *F Page 9 of 16
Figure 6. Write Cycle No. 1 (WE Controlled)
[24, 25, 26, 27]
Figure 7. Write Cycle No. 2 (CE
Controlled)
[24, 25, 26, 27]
Switching Waveforms (continued)

CY621472E30LL-45ZSXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 4Mb 3V 45ns 256K x 16 LP SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet