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SIZ704DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Document Number: 65367
S11-2379-Rev. C, 28-Nov-11
www.vishay.com
7
Vishay Siliconix
SiZ704DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=72 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
10
-4
0.02
Single Pulse
0.1
0.2
0.05
10
-1
www.vishay.com
8
Document Number: 65367
S11-2379-Rev. C, 28-Nov-11
Vishay Siliconix
SiZ704DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10V thru 5 V
V
GS
=3V
V
GS
=4V
0.005
0.010
0.015
0.020
0.025
0 1020304050
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
10
0.0 3.2 6.4 9.6 12.8 16.0
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 20 V
V
DS
=10V
I
D
=10A
V
DS
= 15 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
012345
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
220
440
660
880
1100
0 5 10 15 20 25 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=4.5V
V
GS
=10V
I
D
=10A
Document Number: 65367
S11-2379-Rev. C, 28-Nov-11
www.vishay.com
9
Vishay Siliconix
SiZ704DT
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
1.0
1.2
1.4
1.6
1.8
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.01
0.02
0.03
0.04
0.05
0.06
012345678 910
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=10A
0
10
20
30
40
50
Power (W)
Time (s)
10 10000.10.010.001 1001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
1s
10 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
100 µs
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ704DT-T1-GE3

Mfr. #:
Buy SIZ704DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 12/16A 20/30W 24/13.5mohm @ 10V
Lifecycle:
New from this manufacturer.
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