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HFBR-2316TZ

P1-P3P4-P6P7-P8
4
CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component’s suscep ti bility to
damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of
this component to prevent damage and/or degradation which may be induced by ESD.
HFBR-1312TZ Transmitter Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit Reference
Storage Temperature T
S
-55 85 °C
Operating Temperature T
A
-40 85 °C
Lead Soldering Cycle Temperature 260 °C Note 1
Lead Soldering Cycle Time 10 sec
Forward Input Current DC I
FDC
100 mA
Reverse Input Voltage V
R
1 V
Notes:
1. 2.0 mm from where leads enter case.
HFBR-1312TZ Transmitter Electrical/Optical Characteristics
0 to 70°C unless otherwise specied
Parameter Symbol Min. Typ.
[2]
Max. Unit Condition Ref.
Forward Voltage V
F
1.1 1.4 1.7 V I
F
= 75 mA Fig. 3
1.5 I
F
= 100 mA
Forward Voltage
Temperature Coecient
∆V
F
/∆T -1.5 mV/°C I
F
= 75 - 100 mA
Reverse Input Voltage V
R
1 4 V I
R
= 100 µA
Center Emission Wavelength λ
C
1270 1300 1370 nm
Full Width Half Maximum FWHM 130 185 nm
Diode Capacitance C
T
16 pF V
F
= 0 V, f = 1 MHz
Optical Power
Temperature Coecient
∆P
T
/∆T -0.03 dB/°C I
F
= 75 - 100 mA DC
Thermal Resistance q
JA
260 °C/W Note 3
Notes:
2. Typical data are at T
A
= 25°C.
3. Thermal resistance is measured with the transmitter coupled to a connector assembly and mounted on a printed circuit board; q
JC
< q
JA
.
5
HFBR-1312TZ Transmitter Output Optical Power and Dynamic Characteristics
Parameter Symbol Min. Typ.
[1]
Max. Unit
Condition
Ref.T
A
I
F, peak
Peak Power
62.5/125 µm
NA = 0.275
P
T62
-16.0 -14.0 -12.5 dBm 25°C 75 mA Notes
2, 3, 4
Fig. 4
-17.5 -11.5 0-70°C 75 mA
-15.5 -13.5 -12.0 25°C 100 mA
-17.0 -11.0 0-70°C 100 mA
Peak Power
50/125 µm
NA = 0.20
P
T50
-19.5 -17.0 -14.5 dBm 25°C 75 mA Notes
2, 3, 4
Fig. 4
-21.0 -13.5 0-70°C 75 mA
-19.0 -16.5 -14.0 25°C 100 mA
-20.5 -13.0 0-70°C 100 mA
Optical Overshoot OS 5 10 % 0-70°C 75 mA Note 5
Fig. 5
Rise Time t
r
1.8 4.0 ns 0-70°C 75 mA Note 6
Fig. 5
Fall Time t
f
2.2 4.0 ns 0-70°C 75 mA Note 6
Fig. 5
Notes:
1. Typical data are at T
A
= 25°C.
2. Optical power is measured with a large area detector at the end of 1 meter of mode stripped cable, with an ST* precision ceramic ferrule
(MIL-STD-83522/13), which approximates a standard test connector. Average power measurements are made at 12.5 MHz with a 50% duty
cycle drive current of 0 to I
F,peak
; I
F,average
= I
F,peak
/2. Peak optical power is 3 dB higher than average optical power.
3. When changing from µW to dBm, the optical power is referenced to 1 mW (1000 µW).
Optical power P(dBm) = 10*log[P(µW)/1000µW].
4. Fiber NA is measured at the end of 2 meters of mode stripped ber using the far-eld pattern. NA is dened as the sine of the half angle,
determined at 5% of the peak intensity point. When using other manufacturer’s ber cable, results will vary due to diering NA values and test
methods.
5. Overshoot is measured as a percentage of the peak amplitude of the optical waveform to the 100% amplitude level. The 100% amplitude level
is determined at the end of a 40 ns pulse, 50% duty cycle. This will ensure that ringing and other noise sources have been eliminated.
6. Optical rise and fall times are measured from 10% to 90% with 62.5/125 µm ber. LED response time with recommended test circuit (Figure 3)
at 25 MHz, 50% duty cycle.
Figure 4. Normalized transmitter output power vs. forward currentFigure 3. Typical forward voltage and current characteristics
100
1.1 1.2 1.3 1.4 1.5 1.6
V
F
- FORWARD VOLTAGE - V
I
F
- FORWARD CURRENT - mA
90
80
70
60
50
40
20
30
1.2
10 30 50 70 90
RELATIVE POWER RATIO
1.1
0.8
0.7
0.5
0.4
0.3
0.2
I
F
- FORWARD CURRENT - mA
0.9
1.0
0.6
6
HFBR-2316TZ Receiver Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit Reference
Storage Temperature T
S
-55 85 °C
Operating Temperature T
A
-40 +85 °C
Lead Soldering Temperature 260 °C Note 1
Cycle Time 10 s
Signal Pin Voltage V
O
-0.5 V
CC
V
Supply Voltage V
CC
- V
EE
-0.5 6.0 V Note 2
Output Current I
O
25 mA
Notes:
1. 2.0 mm from where leads enter case.
2. The signal output is referred to V
CC
, and does not reject noise from the V
CC
power supply. Consequently, the V
CC
power supply must be ltered.
The recommended power supply is +5 V on V
CC
for typical usage with +5 V ECL logic. A -5 V power supply on V
EE
is used for test purposes to
minimize power supply noise.
Figure 5. Recommended transmitter drive and test circuit
DATA +
DATA -
10
9
13
12
8
14
15
6
7
4
2
53
16
0.1 µF
+ 5.0 V
75 Ω
75 Ω
220 Ω
1
2.7 Ω
24 Ω
NE46134
150 Ω
NE46134
2.7 Ω
220 Ω
0.1
µF
10 µF
TANTALUM
HFBR-1312TZ
MC10H116A
NOTES:
1. ALL RESISTORS ARE 5% TOLERANCE.
2. BEST PERFORMANCE WITH SURFACE MOUNT COMPONENTS.
3. DIP MOTOROLA MC10H116 IS SHOWN, PLCC MAY ALSO BE USED.
11
V
bb
2, 6
7
3
MC10H116B
MC10H116C
CAUTION: The small junction sizes inherent to the design of this bipolar component increase the component’s suscep ti bility to
damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of
this component to prevent damage and/or degradation which may be induced by ESD.
P1-P3P4-P6P7-P8

HFBR-2316TZ

Mfr. #:
Buy HFBR-2316TZ
Manufacturer:
Broadcom / Avago
Description:
Fiber Optic Transmitters, Receivers, Transceivers 125MHz 1300nm FO Rx Pb-Free
Lifecycle:
New from this manufacturer.
Delivery:
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