NZH_SER_1 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 27 January 2010 4 of 9
NXP Semiconductors
NZH series
Single Zener diodes
[1] f = 1 MHz; V
R
=0V
[1] f = 1 MHz; V
R
=0V
[1] f = 1 MHz; V
R
=0V
4V3B 4.17 4.43 1000 40 5 1 450
4V7B 4.55 4.80 900 25 5 1 300
5V1B 4.94 5.20 800 20 5 1.5 300
5V6B 5.45 5.73 500 13 5 2.5 300
6V2B 5.96 6.27 300 10 5 3 200
6V8B 6.49 6.83 150 8 2 3.5 200
7V5C 7.29 7.67 120 8 0.5 4 150
8V2B 8.02 8.36 120 8 0.5 5 150
9V1B 8.85 9.23 120 8 0.5 6 150
10C 9.70 10.20 120 8 0.2 7 90
Table 9. Characteristics per type; NZH11C to NZH20C
T
j
=25
°
C unless otherwise specified.
NZHxxx Working voltage
V
Z
(V);
I
Z
=10mA
Maximum differential
resistance
r
dif
(Ω)
Reverse current
I
R
(μA)
Diode
capacitance
C
d
(pF)
[1]
Min Max I
Z
=1mA I
Z
=10mA Max V
R
(V) Max
11C 10.82 11.38 120 10 0.04 8 85
12B 11.44 12.03 110 12 0.04 9 85
13B 12.35 13.65 110 14 0.04 10 80
15B 14.25 15.75 110 16 0.04 11 75
16C 15.69 16.51 150 18 0.04 12 75
18C 17.42 18.33 150 23 0.04 13 70
20C 19.23 20.22 200 28 0.04 15 60
Table 10. Characteristics per type; NZH22C to NZH30C
T
j
=25
°
C unless otherwise specified.
NZHxxx Working voltage
V
Z
(V);
I
Z
=5mA
Maximum differential
resistance
r
dif
(Ω)
Reverse current
I
R
(μA)
Diode
capacitance
C
d
(pF)
[1]
Min Max I
Z
=1mA I
Z
=5mA Max V
R
(V) Max
22C 21.08 22.17 200 30 0.04 17 60
24C 23.12 24.31 200 35 0.04 19 55
27C 25.63 26.95 250 45 0.04 21 50
30C 28.50 31.50 250 55 0.04 23 50
Table 8. Characteristics per type; NZH3V0B to NZH10C
…continued
T
j
=25
°
C unless otherwise specified.
NZHxxx Working voltage
V
Z
(V);
I
Z
=20mA
Maximum differential
resistance
r
dif
(Ω)
Reverse current
I
R
(μA)
Diode
capacitance
C
d
(pF)
[1]
Min Max I
Z
=1mA I
Z
=20mA Max V
R
(V) Max
