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SQ4840EY-T1_GE3

P1-P3P4-P6P7-P9P10-P10
SQ4840EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. D, 31-Oct-11
1
Document Number: 68669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
() at V
GS
= 10 V 0.009
R
DS(on)
() at V
GS
= 4.5 V 0.012
I
D
(A) 20.7
Configuration Single
N-Channel MOSFET
G
D
S
SO-8
5
6
7
8
Top View
2
3
4
1
G
D
S
D
S
D
S
D
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4840EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
20.7
A
T
C
= 125 °C 12
Continuous Source Current (Diode Conduction) I
S
6.5
Pulsed Drain Current
a
I
DM
82
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
30
Single Pulse Avalanche Energy E
AS
45 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
7.1
W
T
C
= 125 °C 2.4
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
85
°C/W
Junction-to-Foot (Drain) R
thJF
21
SQ4840EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. D, 31-Oct-11
2
Document Number: 68669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 , I
D
= 250 μA 40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1.0
μA V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 14 A - 0.0075 0.009
V
GS
= 10 V I
D
= 14 A, T
C
= 125 °C - - 0.014
V
GS
= 10 V I
D
= 14 A, T
C
= 175 °C - - 0.018
V
GS
= 4.5 V I
D
= 12 A - 0.010 0.012
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 14 A - 45 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz
- 1950 2440
pF Output Capacitance C
oss
- 505 630
Reverse Transfer Capacitance C
rss
- 220 280
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 14 A
-4162
nC Gate-Source Charge
c
Q
gs
-5.5-
Gate-Drain Charge
c
Q
gd
-8.7-
Gate Resistance R
g
f = 1 MHz 0.2 - 1.6
Turn-On Delay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 20
I
D
1 A, V
GEN
= 10 V, R
g
= 6
-1421
ns
Rise Time
c
t
r
-1117
Turn-Off Delay Time
c
t
d(off)
-4568
Fall Time
c
t
f
-1726
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--82A
Forward Voltage V
SD
I
F
= 2.8 A, V
GS
= 0 - 0.75 1.1 V
SQ4840EY
www.vishay.com
Vishay Siliconix
S11-2109 Rev. D, 31-Oct-11
3
Document Number: 68669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
0246810
V
GS
=10Vthru4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
16
32
48
64
80
0 4 8 12 16 20 24 28
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
C
rss
0
500
1000
1500
2000
2500
3000
010203040
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
10
20
30
40
50
012345
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0.000
0.005
0.010
0.015
0.020
0.025
0 1020304050
V
GS
=4.5V
V
GS
=10V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
=14A
V
DS
=20V
0 5 10 15 20 25 30 35 40 45
P1-P3P4-P6P7-P9P10-P10

SQ4840EY-T1_GE3

Mfr. #:
Buy SQ4840EY-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V 10A 1.56W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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