AON6240
Symbol Min Typ Max Units
BV
DSS
40 V
V
DS
=40V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage
1.3 1.9 2.4 V
I
D(ON)
355 A
1.3 1.6
T
J
=125°C 2.1 2.7
1.8 2.4 mΩ
g
FS
166 S
V
SD
0.7 1 V
I
S
85 A
C
iss
4360 5458 6550 pF
C
oss
970 1395 1815 pF
C
rss
30 103 176 pF
R
g
0.5 1.0 1.6 Ω
Q
g
(10V) 58 72.8 88 nC
Q
g
(4.5V) 24 31 44 nC
Q
gs
14.8 nC
Q
gd
10.8 nC
t
D(on)
14.8 ns
Gate Drain Charge
I
S
=1A,V
GS
=0V
SWITCHING PARAMETERS
Total Gate Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Zero Gate Voltage Drain Current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
Gate-Body leakage current
Drain-Source Breakdown Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
V
GS
=4.5V, I
D
=20A
V
GS
=10V, I
D
=20A
On state drain current
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
mΩ
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=20V, f=1MHz
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
V
GS
=10V, V
DS
=20V, I
D
=20A
Gate Source Charge
r
t
D(off)
61.3 ns
t
f
10 ns
t
rr
16 23.9 31
ns
Q
rr
59 84.6 110 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
V
GS
=10V, V
DS
=20V, R
L
=1
,
R
GEN
=3Ω
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0: February 2011 www.aosmd.com Page 2 of 6
