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VS-MURB1620CT-1HM3

P1-P3P4-P6P7-P8
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 94852
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Fig. 9 - Reverse Recovery Waveform and Definitions
t
rr
(ns)
dI
F
/dt (A/μs)
100 1000
10
60
20
30
50
40
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100 1000
0
200
40
80
120
160
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
5
Document Number: 94852
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MURB1620CTHM3 50 1000 Antistatic plastic tube
VS-MURB1620CT-1HM3 50 1000 Antistatic plastic tube
VS-MURB1620CTLHM3 800 800 13" diameter reel
VS-MURB1620CTRHM3 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
TO-263AB (D
2
PAK) www.vishay.com/doc?95046
TO-262AA www.vishay.com/doc?95419
Part marking information
TO-263AB (D
2
PAK) www.vishay.com/doc?95444
TO-262AA www.vishay.com/doc?95443
Packaging information TO-263AB (D
2
PAK) www.vishay.com/doc?95032
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-15
1
Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D
2
PAK
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC
®
outline TO-263AB
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
M
M
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
P1-P3P4-P6P7-P8

VS-MURB1620CT-1HM3

Mfr. #:
Buy VS-MURB1620CT-1HM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - TO-262-e3
Lifecycle:
New from this manufacturer.
Delivery:
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