BAS116 RFG

- Low power loss, high current capability, low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with
Nickel (Ni) under plate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8 mg (approximately)
- Marking Code: JV
SYMBOL UNIT
P
D
mW
V
RRM
V
I
O
mA
I
FSM
mA
R
θJA
°C/W
T
J
, T
STG
°C
SYMBOL UNIT
V
BR
V
C
J
pF
t
rr
ns
Notes : 1. Valid provided that electrodes are kept at ambient temperature
Document Number: DS_S1412037 Version: D15
Thermal Resistance (Junction to Ambient) (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
Mean Forward Current
Repetitive Peak Reverse Voltage
Power Dissipation
-55 to +150
330
500
200
75
-
2. Reverse recovery test conditions : I
F
=10mA , I
R
=10mA , R
L
=100 , I
RR
= 1mA
3.0Reverse Recovery Time (Note 2)
-2.0
V
75
MIN
Junction and Storage Temperature Range
PARAMETER MAX
-Reverse Breakdown Voltage
I
R
= 100 μA
225
-
-1.0
0.9
V
F
-
-1.25
1.1
Junction Capacitance
Forward Voltage
I
F
= 150 mA
I
F
= 50 mA
I
F
= 10 mA
I
F
= 1 mA
V
R
= 0 V , f = 1.0 MHz
Reverse Leakage Current
PARAMETER VALUE
SOT-23
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
BAS116
Taiwan Semiconductor
Small Signal Product
225mW, SMD Switching Diode
FEATURES
nA
V
R
= 75 V
T
J
=25°C
T
J
=150°C
I
R
-
80
5
Small Signal Product
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1412037 Version: D15
RATINGS AND CHARACTERISTICS CURVES
BAS116
Taiwan Semiconductor
1
10
100
1000
10000
0 20406080100120
Reverse Current (μA)
Reverse Voltage (V)
Fig. 2 Reverse Current vs. Reverse Voltage
0
50
100
150
200
250
0 25 50 75 100 125 150 175
Power Dissipation (mW)
Ambient Temperature (
o
C)
Fig. 3
Fig. 3 Admissible Power Dissipation Curve
0
0.4
0.8
1.2
1.6
2
048121620
Junction Capacitance (pF)
Reverse Voltage (V)
Fig. 4 Typical Junction Capacitance
0.01
0.1
1
10
100
1000
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Instantaneous Forward Current (mA)
Instantaneous Forward Voltage (V)
Fig. 1 Typical Forward Characteristics
ORDERING INFORMATION
PART NO.
BAS116
PART NO.
BAS116
PACKAGE OUTLINE DIMENSIONS
Min Max Min Max
A 2.70 3.10 0.106 0.122
B 1.10 1.50 0.043 0.059
C 0.30 0.51 0.012 0.020
D 1.78 2.04 0.070 0.080
E 2.10 2.64 0.083 0.104
F 0.89 1.30 0.035 0.051
G
H
SUGGESTED PAD LAYOUT
Z
X
Y
C
E
Document Number: DS_S1412037 Version: D15
BAS116 RFG G Green compoundRF
EXAMPLE
PREFERRED P/N
PACKING CODE
SUFFIX
DESCRIPTIONPACKING CODE
PACKING
G SOT-23 3K / 7" Reel
PACKING CODE
RF
0.9 0.035
1.9 0.075
1.0 0.039
Unit (inch)
Typ. Typ.
2.8 0.110
0.7 0.028
DIM.
Unit (mm) Unit (inch)
0.55 REF 0.022 REF
0.10 REF 0.004 REF
DIM.
Unit (mm)
SOT-23
BAS116
Taiwan Semiconductor
Small Signal Product
PACKING CODE
SUFFIX
PACKAGE

BAS116 RFG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Diodes - General Purpose, Power, Switching Switching diode 225mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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