TIC201S-S

TIC201 SERIES
SILICON TRIACS
1
JANUARY 1977- REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Sensitive Gate Triacs
2.5 A RMS
Glass Passivated Wafer
400 V to 700 V Off-State Voltage
Max I
GT
of 5 mA (Quadrant 1)
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 8C derate linearly to 110°C case temperature
at
the rate of 100 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or b
elow) the rated value of on-state current. Surge
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for a maximum ave
raging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC201D
TI
C201M
TIC201S
V
DRM
400
600
700
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I
T(RMS)
2.5 A
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) I
TSM
12 A
Peak gate current I
GM
±0.2 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width 20
0 µs) P
GM
1.3 W
Average gate power dissipation a
t (or below) 85°C case temperature (see Note 4) P
G(AV)
0.3 W
Operating case temperature range T
C
-40 to +110 °C
Storage temperature range T
stg
-40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T
L
230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted )
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I
DRM
Repetitive peak
off-state current
V
D
= rated V
DRM
I
G
= 0 T
C
= 11C ±1 mA
I
GT
Gate trigger
current
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
5
-8
-1
0
25
mA
All voltages are with respect to Main Terminal 1.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
OBSOLETE
TIC201 SERIES
SILICON TRIACS
2
JANUARY 1977- REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t
p
= 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supp
lied by a generator with the following characteristics:
R
G
= 100 , t
p(g)
= 20 µs, t
r
= 15 ns, f = 1 kHz.
V
GT
Gate trigger
voltage
V
supply
= +12 V
V
supply
= +12 V
V
supply
= -12 V
V
supply
= -12 V
R
L
= 10
R
L
= 10
R
L
= 10
R
L
= 10
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
t
p(g)
> 20 µs
0.7
-0
.7
-0.7
0.7
2.5
-2.5
-2.5
V
V
T
On-state voltage I
T
= ±3.5 A I
G
= 50 mA (see Note 5) ±1.9 V
I
H
Holding current
V
supply
= +12 V
V
supply
= -12 V
I
G
= 0
I
G
= 0
Init’ I
TM
= 100 mA
Init’ I
TM
= - 100 mA
30
-3
0
mA
I
L
Latching current
V
supply
= +12 V
V
supply
= -12 V
(see Note 6)
40
-4
0
mA
dv/dt
Critical rate of rise of
of
f-state voltage
V
DRM
= Rated V
DRM
I
G
= 0 T
C
= 11C ±20 V/µs
dv/dt
(c)
Critical rise of
commutation voltage
V
DRM
= Rated V
DRM
I
TRM
= ±3.5 A T
C
= 85°C ±1 ±4 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 10 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OBSOLETE

TIC201S-S

Mfr. #:
Manufacturer:
Bourns
Description:
Triacs 700V 2.5A TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
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