Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
BT148-600R,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NXP Semiconductors
BT148-600R
SCR
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
6 / 13
8.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 6
-
-
2.5
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
-
95
-
K/W
aaa-01
1908
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
1
10
-1
10
Z
th(j-mb)
(K/W)
10
-2
t
p
P
t
Fig. 6.
T
ransient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors
BT148-600R
SCR
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
7 / 13
9.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
-
15
200
µA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C;
Fig. 8
-
0.17
10
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
0.1
6
mA
V
T
on-state voltage
I
T
= 5 A; T
j
= 25 °C;
Fig. 10
-
1.23
1.8
V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 1
1
-
0.4
1
V
V
GT
gate trigger voltage
V
D
= 600 V; I
T
= 0.1 A; T
j
= 1
10 °C;
Fig. 1
1
0.1
0.2
-
V
I
D
off-state current
V
D
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
I
R
reverse current
V
R
= 600 V; T
j
= 125 °C
-
0.1
0.5
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
-
50
-
V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 10 A; V
D
= 600 V; I
G
= 5 mA; dI
G
/
dt = 0.2 A/µs; T
j
= 25 °C
-
2
-
µs
t
q
commutated turn-off
time
V
DM
= 402 V; T
j
= 125 °C; I
TM
= 8 A;
V
R
= 10 V; (dI
T
/dt)
M
= 10 A/µs; dV
D
/
dt = 2 V/µs; R
GK
= 1 kΩ; (V
DM
= 67% of
V
DRM
)
-
100
-
µs
NXP Semiconductors
BT148-600R
SCR
BT148-600R
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
13 March 2014
8 / 13
T
j
(°C)
-50
150
100
0
50
aaa-01
1902
1
2
3
I
GT
I
GT(25°C)
0
Fig. 7.
Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
aaa-01
1903
1
2
3
I
L
I
L(25°C)
0
R
GK
= 1 kΩ
Fig. 8.
Normalized latching current as a function of
junction temperature
T
j
(°C)
-50
150
100
0
50
aaa-01
1904
1
2
3
I
H
I
H(25°C)
0
R
GK
= 1 kΩ
Fig. 9.
Normalized holding current as a function of
junction temperature
V
T
(V)
0
3
2
1
aaa-01
1906
4
8
12
I
T
(A)
0
(1)
(2)
(3)
V
o
= 1.26 V; R
s
= 0.099 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10.
On-state current as a function of on-state
voltage
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BT148-600R,127
Mfr. #:
Buy BT148-600R,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs RAIL SCR
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
BT148-600R,127
