VS-E4PH3006L-N3
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Vishay Semiconductors
Revision: 19-Jan-17
1
Document Number: 95897
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Hyperfast Soft Recovery Diode,
30 A FRED Pt
®
Gen 4
FEATURES
•Gen 4 FRED Pt
®
technology
•Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polymide passivated chip for high reliability
standard
• 175 °C operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
Gen 4 Fred technology, state of the art, ultrafast V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.37 V
t
rr
typ. see Recovery table
T
J
max. 175 °C
Package TO-247AD 2L
Diode variation Single die
Base cathode
2
1
3
Cathode
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
600 V
Average rectified current I
F(AV)
T
C
= 122 °C 30
A
Single pulse forward current I
FSM
T
C
= 25 °C, t
p
= 8.3 ms half sine wave 240
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 1.65 2
I
F
= 60 A - 1.95 -
I
F
= 30 A, T
J
= 125 °C - 1.44 -
I
F
= 60 A, T
J
= 125 °C - 1.78 -
I
F
= 30 A, T
J
= 150 °C - 1.37 1.6
I
F
= 60 A, T
J
= 150 °C - 1.68 -
Reverse leakage current I
R
V
R
= V
R
rated - - 50
μA
T
J
= 150 °C, V
R
= V
R
rated - - 500
Junction capacitance C
T
V
R
= 600 V - 18.3 - pF