Vishay Siliconix
Si1426DH
Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
www.vishay.com
1
N-Channel 30 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Thermally Enhanced SC-70 Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Boost Converter in Portable Devices
- Low Gate Charge (3 nC)
• Low Current Synchronous Rectifier
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.075 at V
GS
= 10 V
3.6
0.115 at V
GS
= 4.5 V
2.9
Note:
a. Surface mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.6 2.8
A
T
A
= 85 °C
2.6 2.1
Pulsed Drain Current
I
DM
10
Continuous Diode Current (Diode Conduction)
a
I
S
1.3 0.8
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.6 1.0
W
T
A
= 85 °C
0.8 0.5
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 5 s
R
thJA
60 80
°C/W
Steady State 100 125
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
34 45
Marking Code
AC XX
Lot Traceability
and Date Code
Part # Code
YY
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
D
D
G
D
D
S
Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free)
Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free)