IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN360N15T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 140 230 S
C
iss
47.5 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 3060 pF
C
rss
665 pF
t
d(on)
50 ns
t
r
170 ns
t
d(off)
115 ns
t
f
265 ns
Q
g(on)
715 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 180A 185 nC
Q
gd
200 nC
R
thJC
0.14 °C/W
R
thCS
0.05 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 360 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1440 A
V
SD
I
F
= 60A, V
GS
= 0V, Note 1 1.2 V
t
rr
150 ns
Q
RM
0.50 μC
I
RM
9.00 A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 1Ω (External)
I
F
= 160A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 60V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.