CM2020-01TR

CM202001TR
http://onsemi.com
4
BACKDRIVE PROTECTION
Below, two scenarios are discussed to illustrate what can
happen when a powered device is connected to an
unpowered device via a HDMI interface, substantiating the
need for backdrive protection on this type of interface.
In the first example a DVD player is connected to a TV via
an HDMI interface. If the DVD player is switched off and
the TV is left on, there is a possibility of reverse current flow
back into the main power supply rail of the DVD player.
Typically, the DVD’s power supply has some form of bulk
supply capacitance associated with it. Because all CMOS
logic exhibits a very high impedance on the power rail node
when “off”, if there may be very little parasitic shunt
resistance, and even with as little as a few milliamps of
“backdrive” current flowing into the power rail, it is possible
over time to charge that bulk supply capacitance to some
intermediate level. If this level rises above the
poweronreset (POR) voltage level of some of the
integrated circuits in the DVD player, these devices may not
reset properly when the DVD player is turned back on.
In a more serious scenario, if any SOC devices are
incorporated in the design which have builtin level shifter
and DRC diodes for ESD protection, there is even a risk for
permanent damage. In this case, if there is a pullup resistor
(such as with DDC) on the other end of the cable, that
resistance will pull the SOC chips “output” up to a high
level. This will forward bias the upper ESD diode in the
DRC and charge the bulk capacitance in a similar fashion as
described in the first example. If this current flow is high
enough, even as little as a few milliamps, it could destroy
one of the SOC chip’s internal DRC diodes, as they are not
designed for passing DC.
To avoid either of these situations, the CM202001TR
was designed to block backdrive current, guaranteeing no
more than 5 mA on any I/O pin when the I/O pin voltage is
greater than the CM202001TR supply voltage.
Figure 1. Backdrive Protection Diagram.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter Rating Units
V
CC5V
, V
CCLV
6.0 V
DC Voltage at any Channel Input 6.0 V
Storage Temperature Range 65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD (RECOMMENDED) OPERATING CONDITIONS
Symbol Parameter Min Typ Max Units
5V_SUPPLY Operating Supply Voltage GND 5 5.5 V
LV_SUPPLY Bias Supply Voltage 1 3.3 5.5 V
Operating Temperature Range –40 85 °C
CM202001TR
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5
SPECIFICATIONS (Cont’d)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter Conditions Min Typ Max Units
I
CC5V
Operating Supply Current 5V_SUPPLY = 5.0 V 110 130
mA
I
CCLV
Bias Supply Current LV_SUPPLY = 3.3 V 1 5
mA
V
DROP
5V_OUT Overcurrent Output Drop 5V_SUPPLY = 5.0 V,
I
OUT
= 55 mA
65 100 mV
I
SC
5V_OUT Short Circuit Current Limit 5V_SUPPLY = 5.0 V,
5V_OUT = GND
90 135 175 mA
I
OFF
OFF State Leakage Current, Level Shifting
NFET
LV_SUPPLY = 0 V 0.1 5.0
mA
I
BACKDRIVE
Current Conducted from Output Pins to
V_SUPPLY Rails when Powered Down
5V_SUPPLY < V
CH_OUT
Signal Pins: TMDS_D[2:0]+/,
TMDS_CK+/, CE_REMOTE_OUT,
DDC_DAT_OUT, DDC_CLK_OUT,
HOTPLUG_DET_OUT, 5V_OUT
Only
0.1 5.0
mA
I
BACKDRIVE,
CEC
Current through CEREMOTE_OUT when
Powered Down
CEREMOTE_IN = CE_SUPPLY <
CE_REMOTE_OUT
0.1 1.0
mA
V
ON
VOLTAGE Drop Across Level Shifting NFET
when ON
LV_SUPPLY = 2.5 V, V
S
= GND,
I
DS
= 3 mA
75 95 140 mV
V
F
Diode Forward Voltage
Top Diode
Bottom Diode
I
F
= 8 mA, T
A
= 25°C
0.60
0.60
0.85
0.85
0.95
0.95
V
V
ESD
ESD Withstand Voltage
Contact Discharge per
IEC 6100042 Standard
Pins 4, 7, 10, 13, 20, 21, 22, 23, 24,
27, 30, 33, 38
(Note 2)
±8
kV
V
CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T
A
= 25°C, I
PP
= 1 A, t
P
= 8/20 ms
(Note 3)
11.0
2.0
V
R
DYN
Dynamic Resistance
Positive Transients
Negative Transients
T
A
= 25°C, I
PP
= 1 A, t
P
= 8/20 ms
(Note 3)
1.2
0.9
W
I
LEAK
TMDS Channel Leakage Current T
A
= 25°C 0.01 1
mA
C
IN,
TMDS TMDS Channel Input Capacitance 5V_SUPPLY = 5.0 V, Measured at
1 MHz, V
BIAS
= 2.5 V
0.9 1.2 pF
DC
IN,
TMDS
TMDS Channel Input Capacitance Matching 5V_SUPPLY = 5.0 V, Measured at
1 MHz, V
BIAS
= 2.5 V (Note 4)
0.05 pF
C
IN,
DDC Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, V
BIAS
= 2.5 V
3.5 4 pF
C
IN,
CEC Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, V
BIAS
= 2.5 V
3.5 4 pF
C
IN,
HP Level Shifting Input Capacitance, Capacitance
to GND
5V_SUPPLY = 5 V, Measured at
100 kHz, V
BIAS
= 2.5 V
3.5 4 pF
1. Operating Characteristics are over Standard Operating Conditions unless otherwise specified.
2. Standard IEC 6100042, C
DISCHARGE
= 150 pF, R
DISCHARGE
= 330 W, 5V_SUPPLY and LV_SUPPLY within recommended operating
conditions, GND = 0 V, 5V_OUT (pin 38), each bypassed with a 0.1 mF ceramic capacitor connected to GND.
3. These measurements performed with no external capacitor on ESD_BYP.
4. Intrapair matching, each TMDS pair (i.e. D+, D).
CM202001TR
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6
PERFORMANCE INFORMATION
Typical Filter Performance (T
A
= 25°C, DC Bias = 0 V, 50 W Environment)
Figure 2. Insertion Loss vs. Frequency (TMDS_D1 to GND)

CM2020-01TR

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Interface - Specialized HDMI Port P/I Device
Lifecycle:
New from this manufacturer.
Delivery:
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