RN2712JE,RN2713JE
2014-03-01 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2712JE, RN2713JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
z Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
z Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
z A wide range of resistor values is available for use in various circuits.
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−100 mA
Collector power dissipation P
C
* 100 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit
(top view)
1.BASE1
2.EMITTER
3.BASE2
4.COLLECTOR2
5.COLLECTOR1
(B1)
(E)
(B2)
(C2)
(C1)
JEDEC ―
JEITA ―
TOSHIBA 2-2P1D
Weight: 0.003g(typ.)
Unit : mm
5 4
1 2 3
Q2 Q1
Start of commercial production
2001-06
