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IRFR3418PBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
12/03/04
IRFR3418PbF
IRFU3418PbF
HEXFET
®
Power MOSFET
Notes through are on page 10
D-Pak
IRFR3418
I-Pak
IRFU3418
PD - 95516A
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
P
D
@T
A
= 25°C
Maximum Power Dissipation
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.05
R
θJA
Junction-to-Ambient (PCB Mount) * ––– 40 °C/W
R
θJA
Junction-to-Ambient ––– 110
300 (1.6mm from case )
Max.
70
50
280
80
± 20
140
0.95
5.2
3.8
-55 to + 175
V
DSS
R
DS(on)
Max I
D
80V
14m
30A
IRFR/U3418PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 80 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C
DS(on)
Static Drain-to-Source On-Resistance ––– 11.5 14
mΩ
V
GS(th)
Gate Threshold Voltage 3.5 ––– 5.5 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 66 ––– ––– S
Q
g
Total Gate Charge ––– 63 94
Q
gs
Gate-to-Source Charge ––– 23 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 23 –––
t
d(on)
Turn-On Delay Time ––– 24 –––
t
r
Rise Time ––– 72 –––
t
d(off)
Turn-Off Delay Time ––– 41 ––– ns
t
f
Fall Time ––– 27 –––
iss
Input Capacitance ––– 3510 –––
oss
Output Capacitance ––– 330 –––
rss
Reverse Transfer Capacitance ––– 190 ––– pF
oss
Output Capacitance ––– 1220 –––
oss
Output Capacitance ––– 240 –––
oss
eff.
Effective Output Capacitance ––– 360 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 70 A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 280
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 57 ––– ns
Q
rr
Reverse Recovery Charge ––– 130 ––– nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
Conditions
V
DS
= 25V, I
D
= 18A
I
D
= 18A
V
DS
= 40V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
260
18
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 150°C, I
F
= 18A, V
DD
= 25V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
Max.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= 0V to 64V
V
GS
= 10V
V
DD
= 40V
I
D
= 18A
R
G
= 6.8Ω
IRFR/U3418PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
°
V =
I =
GS
D
10V
70A
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
6.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
6.0V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
5 6 7 8 9 10 11 12 13 14 15
V
GS
, Gate-to-Source Voltage (V)
0.01
0.10
1.00
10.00
100.00
1000.00
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRFR3418PBF

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Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 70A DPAK
Lifecycle:
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