BSS84PL6433HTMA1

2011-06-01
Rev 2.6 Page 1
BSS 84 P
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
-60 V
R
DS(on)
8
I
D
-0.17 A
Feature
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
PG-SOT-23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
YBs
Type
Package
Tape and Reel
BSS 84 P
PG-SOT-23
H6327:3000pcs/r.
Maximum Ratings, at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.17
-0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
-0.68
Avalanche energy, single pulse
I
D
=-0.17 A , V
DD
=-25V, R
GS
=25
E
AS
2.6
mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
Reverse diode dv/dt
I
S
=-0.17A, V
DS
=-48V, di/dt=-200A/µs, T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
0.36
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
BSS 84 P PG-SOT-23H6433:10000pcs/r.
YBs
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
2011-07-11
Rev 2.6 Page 2
BSS 84 P
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS
- - 200 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250µA
V
(BR)DSS
-60 - - V
Gate threshold voltage, V
GS
= V
DS
I
D
=-20µA
V
GS(th)
-1 -1.5 -2
Zero gate voltage drain current
V
DS
=-60V, V
GS
=0, T
A
=25°C
V
DS
=-60V, V
GS
=0, T
A
=125°C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS
=-20V, V
DS
=0
I
GSS
- -10 -100 nA
Drain-source on-state resistance
V
GS
=-4.5V, I
D
=-0.14A
R
DS(on)
- 8 12
Drain-source on-state resistance
V
GS
=-10V, I
D
=-0.17A
R
DS(on)
- 5.8 8
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-07-11
Rev 2.6 Page 3
BSS 84 P
Electrical Characteristics, at T
A
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=-0.14A
0.065 0.13 - S
Input capacitance C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
- 15 19 pF
Output capacitance C
oss
- 6 8
Reverse transfer capacitance C
rss
- 2 3
Turn-on delay time t
d(on)
V
DD
=-30V, V
GS
=-4.5V,
I
D
=-0.14A, R
G
=25
- 6.7 10 ns
Rise time t
r
- 16.2 24.3
Turn-off delay time t
d(off)
- 8.6 12.9
Fall time t
f
- 20.5 30.8
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=-48V, I
D
=-0.17A - 0.25 0.37 nC
Gate to drain charge Q
gd
- 0.3 0.45
Gate charge total Q
g
V
DD
=-48V, I
D
=-0.17A,
V
GS
=0 to -10V
- 1 1.5
Gate plateau voltage V(plateau)
V
DD
=-48V, I
D
=-0.17A - -3.42 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - -0.17 A
Inv. diode direct current, pulsed
I
SM
- - -0.68
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=-0.17A - -0.93 -1.24 V
Reverse recovery time t
rr
V
R
=-30V, I
F
=l
S
,
di
F
/dt=100A/µs
- 23 34 ns
Reverse recovery charge Q
rr
- 10 15 nC

BSS84PL6433HTMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 170MA SOT-23
Lifecycle:
New from this manufacturer.
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