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IXFX420N10T
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK420N10T
IXFX420N10T
IXYS REF:F_420N10T(9V)9-22-09
Fig. 7. Input A
dm
itt
ance
0
20
40
60
80
100
120
140
160
180
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
- Vol
ts
I
D
- Amperes
T
J
= 150ºC
- 40ºC
25ºC
Fig. 8. T
rans
conduc
ta
nce
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
160
180
I
D
- Am
pere
s
g
f s
- Si
emens
T
J
= - 4
0º
C
150ºC
25ºC
Fig. 9. Forwa
rd Volt
age Drop of
Intrinsic
Diode
0
50
100
150
200
250
300
350
0.2
0.3
0.4
0.5
0.6
0.7
0
.8
0.9
1.0
1.1
V
SD
- Vol
ts
I
S
- Ampere
s
T
J
= 150ºC
T
J
= 25º
C
Fig. 10
. Gat
e
Charge
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
700
Q
G
-
N
a
no
C
o
ulombs
V
GS
- Volt
s
V
DS
= 50V
I
D
= 210A
I
G
= 10mA
Fig. 11
. Capac
ita
nce
0.1
1.0
10.0
100.0
0
5
1
0
15
20
25
30
35
40
V
DS
- Vol
ts
Capacit
ance - NanoF
arads
f
= 1 M
H
z
C
iss
C
rss
C
oss
Fig. 12. Forw
ard-
Bias
Sa
fe
Ope
rat
ing A
rea
1
10
100
1,000
10,000
1
10
100
1,000
V
DS
- V
ol
ts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on)
Lim
it
T
J
= 175ºC
T
C
= 25
ºC
Single Pulse
100ms
Ex
ter
n
al Lead Lim
it
DC
© 2009 IXYS CORPORATION, All Rights Reserved
IXFK420N10T
IXFX420N10T
Fig
. 14. R
esistive T
ur
n-on R
ise T
im
e
vs. D
rai
n
Cu
rr
ent
0
40
80
120
160
200
240
280
320
40
60
80
1
00
120
140
160
180
200
I
D
- A
m
p
e
res
t
r
- Na
nose
co
nds
T
J
= 25º
C
T
J
= 125ºC
R
G
= 1
,
V
GS
= 10
V
V
DS
= 50V
Fi
g.
15.
Resi
sti
ve T
u
rn
-o
n Swi
tchi
n
g T
im
es
vs.
Gate R
esistan
ce
100
200
300
400
500
600
700
12
345678
9
1
0
R
G
- Oh
m
s
t
r
- Nanoseconds
0
40
80
120
160
200
240
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 5
0V
I
D
=
100A
I
D
=
200A
Fi
g.
16.
Resi
sti
ve T
u
rn
-of
f Switch
i
ng
T
i
m
es
vs. Ju
n
ctio
n T
em
per
atu
re
0
100
200
300
400
500
600
700
25
35
45
55
65
7
5
85
95
1
05
115
125
T
J
- Deg
ree
s Cen
t
ig
rad
e
t
f
- Na
nose
conds
80
100
120
140
160
180
200
220
t
d
(
off
)
- Nan
ose
cond
s
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10V
V
DS
= 50
V
I
D
= 100
A
I
D
= 200A
Fi
g.
17.
Resi
sti
ve T
u
rn
-o
ff Swit
chi
ng
T
i
m
es
vs. D
rai
n
Cu
rr
ent
0
100
200
300
400
500
40
60
80
100
12
0
140
160
18
0
2
00
I
D
- Am
peres
t
f
- Na
nose
conds
60
100
140
180
220
260
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10
V
V
DS
= 50
V
T
J
= 25º
C
T
J
= 125ºC
Fi
g.
13.
Resi
sti
ve T
u
rn
-o
n R
ise
T
i
m
e
vs. Ju
n
ctio
n T
em
per
atur
e
100
140
180
220
260
300
340
25
35
45
55
65
75
85
95
105
115
125
T
J
- Deg
ree
s Cen
t
ig
rad
e
t
r
- Na
nose
conds
R
G
= 1
, V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
Fi
g
. 18.
Resi
stiv
e T
ur
n
-off Swi
tch
in
g T
im
es
vs. Gat
e Resi
stanc
e
100
200
300
400
500
600
700
800
12
3456
789
1
0
R
G
- Oh
m
s
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 5
0V
I
D
= 200A
I
D
= 100
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK420N10T
IXFX420N10T
IXYS REF:F_420N10T(9V)9-22-09
Fi
g
. 19.
M
axi
m
u
m
T
ran
si
ent T
h
erm
al I
m
p
eda
nce
0.
001
0.
010
0.
100
1.
000
0.00
001
0.00
01
0.001
0.
01
0.
1
1
10
Puls
e
W
i
dth -
S
e
c
o
nds
Z
(th)J
C
- º
C
/
W
Fi
g
. 19.
M
axi
m
i
um
T
r
ans
ien
t T
her
m
al
I
m
ped
an
ce
.sadg
sfgsf
0.
200
P1-P3
P4-P6
IXFX420N10T
Mfr. #:
Buy IXFX420N10T
Manufacturer:
Littelfuse
Description:
MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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