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IRGB14C40LPBF

P1-P3P4-P6P7-P9P10-P12
www.irf.com 09/14/04
IRGS14C40L
IRGSL14C40L
IRGB14C40LPbF
Ignition IGBT
Page 1
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
TO-220 is available in PbF as a Lead-Free
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Collecto
r
Emitter
Gate
R
2
R
1
TERMINAL DIAGRAM
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
JEDEC TO-220AB
IRGB14C40LPbF
JEDEC TO-262AA
IRGSL14C40L
JEDEC TO-263AB
IRGS14C40L
BV
CES =
370V min, 430V max
I
C
@ T
C
= 110°C = 14A
V
CE(on)
typ= 1.2V @7A @25°C
I
L(min)
=11.5A @25°C,L=4.7mH
Absolute Maximum Ratings
Parameter Max Unit Condition
V
CES
Collector-to-Emitter Voltage Clamped V
R
G
= 1K
ohm
I
C
@ T
C
= 25°C
Continuous Collector Current 20 A
V
GE
= 5V
I
C
@ T
C
= 110°C
Continuous Collector Current 14 A
V
GE
= 5V
I
G
Continuous Gate Current 1 mA
I
Gp
Peak Gate Current 10 mA
t
PK
= 1ms, f = 100Hz
V
GE
Gate-to-Emitter Voltage Clamped V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 125 W
P
D
@ T = 110°C
Maximum Power Dissipation 54 W
T
J
Operating Junction and - 40 to 175 °C
T
STG
Storage Temperature Range - 40 to 175 °C
V
ESD
Electrostatic Voltage 6 KV
C = 100pF, R = 1.5K
ohm
I
L
Self-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter Min Typ Max Uni
t
R
θ
JC
Thermal Resistance, Junction-to-Case 1.2
R
θ
JA
Thermal Resistance, Junction-to-Ambient 40 °C/W
(PCB Mounted, Steady State)
Z
θ
JC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
PD - 95193
www.irf.com 09/14/04
IRGS14C40L
IRGSL14C40L
IRGB14C40LPbF
Ignition IGBT
Page 2
Off-State Electrical Charasteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
CES
Collector-to-Emitter Breakdown Voltage 370 400 430 V
R
G
= 1K ohm, I
C
=7A, V
GE
= 0V
GES
Gate-to-Emitter Breakdown Voltage 10 12 V
I
G
=2m A
I
CES
Collector-to-Emitter Leakage Current 15
µA
R
G
=1K ohm, V
CE
= 250V
100
µA
R
G
=1K ohm, V
CE
= 250V, T
J
=150°C
CER
Emitter-to-Collector Breakdown Voltage
24
28
V
I
C
= -10m A
R
1
Gate Series Resistance
75
ohm
R
2
Gate-to-Emitter Resistance 10 20 30 K ohm
On-State Electrical Charasteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
1.2 1.40
I
C
= 7A, V
GE
= 4.5V
V
CE(on)
Collector-to-Emitter Saturation
1.35
1.55
V
I
C
= 10A, V
GE
= 4.5V
1
Voltage
1.35
1.55
I
C
= 10A, V
GE
= 4.5V, T
C
= -40
o
C
2
1.5 1.7
I
C
= 14A, V
GE
= 5.0V, T
C
= -40
o
C
4
1.55 1.75
I
C
= 14A, V
GE
= 5.0V
1.6 1.8
I
C
= 14A, V
GE
= 5.0V, T
C
=150
o
C
V
GE(th)
Gate Threshold Voltage
1.3
1.8
2.2
V
V
CE
= V
GE
, I
C
= 1 m A, T
C
=25
o
C
3, 5
0.75 1.8
V
CE
= V
GE
, I
C
= 1 m A, T
C
=150
o
C
8
g
fs
Transconductance 10 15 19 S
V
CE
= 25V, I
C
= 10A, T
C
=25
o
C
I
C
Collector Current
20
A
V
CE
= 10V, V
GE
= 4.5V
Switching Characteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fi
g
Q
g
Total Gate charge
27
I
C
= 10A, V
CE
=12V, V
GE
=5V
7
Q
ge
Gate - Emitter Charge
2.5
nC
I
C
= 10A, V
CE
=12V, V
GE
=5V
15
Q
gc
Gate - Collector Charge 10
I
C
= 10A, V
CE
=12V, V
GE
=5V
t
d
(on)
Turn - on delay time 0.6 0.9 1.35
V
GE
=5V, R
G
=1K ohm,
L=1mH, V
CE
=14V
12
t
r
Rise time 1.6 2.8 4
µs
V
GE
=5V, R
G
=1K ohm,
L=1mH, V
CE
=14V
14
t
d
(off)
Turn - off delay time 3.7 6 8.3
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=300V
C
ies
Input Capacitance
550
825
V
GE
=0V,
V
CE
=25V, f=1M H z
C
oes
Output Capacitance
100
150
pF
V
GE
=0V,
V
CE
=25V, f=1M H z
6
C
res
Reverse Transfer Capacitance 12 18
V
GE
=0V, V
CE
=25V, f=1M H z
25
L=0.7m H, T
C
=25°C
I
L
Self-Clamped
15.5
A
L=2.2m H, T
C
=25°C
9
Inductive Switching Current 11.5
L=4.7m H, T
C
=25°C
10
16.5
L=1.5m H, T
C
=150°C
13
7.5
L=4.7m H, T
C
=150°C
14
6
L=8.7m H, T
C
=150°C
T
J
=150
o
C,
t
SC
Short Circuit Withstand Time
120
µs
V
CC
= 16V, L = 10µH
14
R
G
= 1K ohm, V
GE
= 5V
www.irf.com 09/14/04
IRGS14C40L
IRGSL14C40L
IRGB14C40LPbF
Ignition IGBT
Page 3
Fig.4 - Typical V
CE
vs T
J
V
GE
=4.5V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 0 50 100 150 200
T
J
(°C)
V
C E
( V )
I
C
= 7A
I
C
= 10A
Fig.3 - Transfer Characteristics
V
CE
=20V; tp=20µs
0
10
20
30
40
50
60
70
80
90
100
0246810
V
GE
(V)
I
C E
( A )
T
J
= 25°C
T
J
= 125°C
Fig.1 - Typ. Output Characteristics
T
J
=25°C
0
10
20
30
40
50
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 10 V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
Fig.2 - Typ. Output Characteristics
T
J
=125°C
0
10
20
30
40
50
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 10 V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
P1-P3P4-P6P7-P9P10-P12

IRGB14C40LPBF

Mfr. #:
Buy IRGB14C40LPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 430V LO-VCEON DISCRETE IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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