OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXYP15N65C3D1M

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP15N65C3D1M
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
10
11
0 5 10 15 20 25 30 35
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
150ºC
25ºC
V
CE
= 10V
Fig. 10. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
100 200 300 400 500 600 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 20
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 2 4 6 8 101214161820
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 15A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2014IXYS CORPORATION, All Rights Reserved
IXYP15N65C3D1M
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
15
20
25
30
35
40
45
50
55
8 1012141618202224262830
I
C
- Amperes
t
f i
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
10
15
20
25
30
35
40
45
50
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
50
55
60
65
70
75
80
85
90
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 15A
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.2
0.4
0.6
0.8
1.0
20 30 40 50 60 70 80 90 100
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
15
20
25
30
35
40
45
50
55
60
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
f i
- Nanoseconds
40
60
80
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
8 1012141618202224262830
I
C
- Amperes
E
off
- MilliJoules
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 20
Ω
,
V
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 20
Ω ,
V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP15N65C3D1M
IXYS REF: IXY_15N65C3(31)7-30-13-A
Fig. 21. Maximum Transient Thermal Impedance (Diode)
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
60
8 1012141618202224262830
I
C
- Amperes
t
r i
- Nanosecond
s
10
12
14
16
18
20
22
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC, 25ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
10
20
30
40
50
60
70
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
13
14
15
16
17
18
19
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 20
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 15A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r i
- Nanosecond
s
0
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 30A
P1-P3P4-P6

IXYP15N65C3D1M

Mfr. #:
Buy IXYP15N65C3D1M
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet