OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SQJ962EP-T1-GE3

P1-P3P4-P6P7-P7
SQJ962EP
www.vishay.com
Vishay Siliconix
S12-2198-Rev. C, 24-Sep-12
1
Document Number: 67018
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection..
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 10 V 0.060
R
DS(on)
() at V
GS
= 4.5 V 0.080
I
D
(A) per leg 8
Configuration Dual
4
3
2
1
6.15 mm
5.13 mm
Bottom View
PowerPAK
®
SO-8L Dual
G
2
S
2
G
1
S
1
D
2
D
1
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
ORDERING INFORMATION
Package PowerPAK SO-8L
Lead (Pb)-free and Halogen-free SQJ962EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
8
A
T
C
= 125 °C 8
Continuous Source Current (Diode Conduction)
a
I
S
8
Pulsed Drain Current
b
I
DM
32
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy E
AS
5mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
25
W
T
C
= 125 °C 8
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
85
°C/W
Junction-to-Case (Drain) R
thJC
6
SQJ962EP
www.vishay.com
Vishay Siliconix
S12-2198-Rev. C, 24-Sep-12
2
Document Number: 67018
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 15 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 4.3 A - 0.046 0.060
V
GS
= 10 V I
D
= 4.3 A, T
J
= 125 °C - - 0.102
V
GS
= 10 V I
D
= 4.3 A, T
J
= 175 °C - - 0.127
V
GS
= 4.5 V I
D
= 3.5 A - 0.060 0.080
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 4.3 A - 10 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 379 475
pF Output Capacitance C
oss
-7290
Reverse Transfer Capacitance C
rss
-3240
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 4.5 A
-8.514
nC Gate-Source Charge
c
Q
gs
-1.4-
Gate-Drain Charge
c
Q
gd
-3.3-
Gate Resistance R
g
f = 1 MHz 2.25 4.50 6.75
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
g
= 1
-58
ns
Rise Time
c
t
r
-1117
Turn-Off Delay Time
c
t
d(off)
-1624
Fall Time
c
t
f
-69
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--32A
Forward Voltage V
SD
I
F
= 3.5 A, V
GS
= 0 V - 0.8 1.1 V
SQJ962EP
www.vishay.com
Vishay Siliconix
S12-2198-Rev. C, 24-Sep-12
3
Document Number: 67018
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Transconductance
Capacitance
0
4
8
12
16
20
0 1 2 3 4 5
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
0.0
0.4
0.8
1.2
1.6
2.0
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0.00
0.03
0.06
0.09
0.12
0.15
0.18
0.21
0.24
0 4 8 12 16 20
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
C
C
0
4
8
12
16
20
0 3 6 9 12 15
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
100
200
300
400
500
600
0 10 20 30 40 50 60
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P7

SQJ962EP-T1-GE3

Mfr. #:
Buy SQJ962EP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SQJ992EP-T1_GE3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet