IRKU/V41, 56 Series
2
Bulletin I27134 rev. E 10/02
www.irf.com
I
T(AV)
Max. average on-state 45 60 180
o
conduction, half sine wave,
current T
C
= 85
o
C
I
T(RMS
)
Max. RMS on-state 70 95 DC
current @ T
C
82 80 °C
I
TSM
Max. peak, one cycle 850 1310 t=10ms No voltage
non-repetitive on-state 890 1370 t=8.3ms reapplied
current 715 1100 t=10ms 100% V
RRM
750 1150 t=8.3ms reapplied
940 1450 t=10ms T
J
= 25
o
C,
985 1520 t=8.3ms no voltage reapplied
I
2
t Max. I
2
t for fusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V
RRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms T
J
= 25
o
C,
4.03 9.60 t=8.3ms no voltage reapplied
I
2
√t Max. I
2
√t for fusing (1) 36.1 85.6 KA
2
√s t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold 0.88 0.85 Low level (3)
voltage (2) 0.91 0.88 High level (4)
r
t
Max. value of on-state 5.90 3.53 Low level (3)
slope resistance (2) 5.74 3.41 High level (4)
V
TM
Max. peak on-state I
TM
= π x I
T(AV)
voltage I
FM
= π x I
F(AV)
di/dt Max. non-repetitive rate T
J
= 25
o
C, from 0.67 V
DRM
,
of rise of turned on 150 A/µs I
TM
=π x I
T(AV)
, I
g
= 500mA,
current t
r
< 0.5 µs, t
p
> 6 µs
I
H
Max. holding current 200 T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
I
L
Max. latching current 400 T
J
= 25
o
C, anode supply = 6V,resistive load
V
RRM
, maximum V
RSM
, maximum V
DRM
, max. repetitive I
RRM
Voltage repetitive non-repetitive peak off-state voltage, I
DRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
IRKU/V41, 56 08 800 900 800 15
12 1200 1300 1200
16 1600 1700 1600
(1) I
2
t for time t
x
= I
2
√t
x √t
x
. (2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3) 16.7% x π x I
AV
< I < π x I
AV
(4) I > π x I
AV
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Parameters IRKU/V41 IRKU/V56 Units Conditions
A
On-state Conduction
KA
2
s
V
mΩ
1.81 1.54 V
mA
Sinusoidal
half wave,
Initial T
J
= T
J
max.
A
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
Initial T
J
= T
J
max.