OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SSM6N16FUTE85LF

P1-P3P4-P5
SSM6N16FU
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FU
High Speed Switching Applications
Analog Switch Applications
• Suitable for high-density mounting due to compact package
• Low on resistance : R
on
= 3.0 Ω (max) (@V
GS
= 4 V)
: R
on
= 4.0 Ω (max) (@V
GS
= 2.5 V)
: R
on
= 15 Ω (max) (@V
GS
= 1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage V
DS
20 V
Gate-Source voltage V
GSS
±10 V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta = 25°C) P
D
(Note 1) 200 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2J1C
Weight: g
D S
6 5
4
1 2 3
Q1
Q2
654
123
Start of commercial production
2001-03
SSM6N16FU
2014-03-01
2
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±10 V, V
DS
= 0 ⎯ ⎯ ±1 μA
Drain-Source breakdown voltage V
(BR) DSS
I
D
= 0.1 mA, V
GS
= 0 20 ⎯ ⎯ V
Drain cut-off current I
DSS
V
DS
= 20 V, V
GS
= 0 ⎯ ⎯ 1 μA
Gate threshold voltage V
th
V
DS
= 3 V, I
D
= 0.1 mA 0.6 ⎯ 1.1 V
Forward transfer admittance ⏐Y
fs
⏐ V
DS
= 3 V, I
D
= 10 mA 40 ⎯ ⎯ mS
I
D
= 10 mA, V
GS
= 4 V ⎯ 1.5 3.0
I
D
= 10 mA, V
GS
= 2.5 V ⎯ 2.2 4.0
Drain-Source ON resistance R
DS (ON)
I
D
= 1 mA, V
GS
= 1.5 V ⎯ 5.2 15
Ω
Input capacitance C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ⎯ 9.3 ⎯ pF
Reverse transfer capacitance C
rss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ⎯ 4.5 ⎯ pF
Output capacitance C
oss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ⎯ 9.8 ⎯ pF
Turn-on time t
on
⎯ 70 ⎯
Switching time
Turn-off time t
off
V
DD
= 3 V, I
D
= 10 mA,
V
GS
= 0~2.5 V
⎯ 125 ⎯
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
= 100 μA for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
. (Relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on)
)
Please take this into consideration for using the device.
(c) V
OUT
(b) V
IN
t
on
90%
10%
0 V
2.5 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS
(
ON
)
V
DD
= 3 V
Duty ≤ 1%
V
IN
: t
r
, t
f
< 5 ns
(Z
out
= 50 Ω)
Common Source
Ta = 25°C
V
DD
OUT
IN
2.5 V
0
10 μs
50 Ω
R
L
(a) Test circuit
SSM6N16FU
2014-03-01
3
(Q1, Q2 common)
I
D
– V
DS
I
D
– V
GS
R
DS (ON)
– I
D
R
DS (ON)
– V
GS
R
DS (ON)
– Ta
V
th
– Ta
Drain-Source voltage V
DS
(V) Gate-Source voltage V
GS
(V)
Drain current I
D
(mA)
Gate-Source voltage V
GS
(V)
Ambient temperature Ta (°C) Ambient temperature Ta (°C)
Drain current I
D
(mA)
Drain current I
D
(mA)
Drain-Source on resistance
R
DS (ON)
(Ω)
Drain-Source on resistance
R
DS (ON)
(Ω)
Gate threshold voltage V
th
(V)
Drain-Source on resistance
R
DS (ON)
(Ω)
2.5 V
V
GS
= 1.5 V
0
1
4
12
100010
2
6
8
100
Common source
Ta = 25°C
10
4 V
0
0
100
250
121.5 0.5
50
150
200
V
GS
= 1.3 V
1.5
1.7
1.9
Common source
Ta = 25°C
3
4
10
2.5
2.3
2.1
04 108 26
0
2
6
1
4
5
3
25°C
Ta = 100°C
−25°C
Common source
I
D
= 10 mA
02 31
0.01
1
1000
0.1
10
100
Ta = 100°C
Common source
V
DS
= 3 V
−25°C
25°C
0
2
8
6
4
2.5 V, 10 mA
V
GS
= 1.5 V, I
D
= 1 mA
Common source
−25 50 150125 0 75 25 100
4 V, 10 mA
Common source
I
D
= 0.1 mA
V
DS
= 3 V
−25 50 150125 0 75 25 100
0
0.4
2
1.2
1.6
0.8
P1-P3P4-P5

SSM6N16FUTE85LF

Mfr. #:
Buy SSM6N16FUTE85LF
Manufacturer:
Toshiba
Description:
MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet