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TS19721DCS RLG

P1-P3P4-P6P7-P7
TS19721D
Taiwan Semiconductor
Document Number: DS_P0000278 1 Version: A15
Single-Stage PFC Buck Current Control LED Driver
With High Voltage MOSFET Integrated
DESCRIPTION
TS19721D a very efficient constant current controller
for driving LED lamps in non-dimmable lighting
applications. The IC provides a high power factor
correction and constant current accuracy with
boundary conduction mode (BCM) operation in a
single stage buck topology. The TS19721D controller
is easy to integrate with a small BOM and includes an
internal high voltage power MOSFET for PWM control.
Total harmonic distortion (THD) and efficiency are
optimized by an external resistor. The line and load
regulation of LED current are easily maintained to
within ±2.5%. TS19721D also provides V
CC
over-
voltage protection, and output open/short circuit
protection.
FEATUR
ES
● Integrated 600V Power MOSFET
● Low THD <20% (Option)
● Constant current accuracy within ±2.5%
● High Power Factor Correction >0.9
● Boundary Current Mode control
● LED open protection & short protection
● Over current protection (OCP)
● Over temperature protection (OTP)
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC.
● Halogen-free according to IEC 61249-2-21
definition.
A
PPLICATION
● LED lighting system
SOP
-
Pin
Definition
:
1. CS
2. COM
3. N/C
4. Drain
5. RT
6. GND
7. V
CC
8. CS
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE
M
AXIMUM
RATINGS
(T
A
= 25°C unless otherwise specified)
(Note 1)
PARAMETER SYMBOL LIMIT UNIT
Power Supply Pin V
CC
40 V
RT Voltage to GND V
RT
-0.3 to 5.5 V
DRAIN Voltage to GND V
OUT
-0.3 to 620 V
CS Voltage to GND V
CS
-0.3 to 5.5 V
COM Voltage to GND V
COM
-0.3 to 5.5 V
Junction Temperature Range T
J
-40 to +150 °C
Storage Temperature Range T
STG
-65 to +150 °C
Lead Temperature (Soldering 10 sec) T
LEAD
260 °C
Power Dissipation @ T
A
=25 °C P
D
0.3 W
ESD Rating (Human Body Mode)
(Note 2)
HBM 2 kV
ESD Rating (Machine Mode)
(Note 2)
MM 200 V
TS19721D
Taiwan Semiconductor
Document Number: DS_P0000278 2 Version: A15
THERMAL PERFORMANCE
(Note 3)
PARAMETER SYMBOL LIMIT UNIT
Thermal Resistance - Junction to Case R
ӨJC
106.6
o
C/W
Thermal Resistance - Junction to Ambient R
ӨJA
220
o
C/W
RECOMMENDED OPERATING CONDITION
(T
A
= 25°C unless otherwise specified)
(Note 4)
PARAMETER SYMBOL LIMIT UNIT
Power Supply Pin V
CC
33 V
RT Voltage to GND V
RT
-0.3 to 5 V
DRAIN Voltage to GND V
OUT
-0.3 to 620 V
CS Voltage to GND V
CS
-0.3 to 5 V
COM Voltage to GND V
COM
-0.3 to 5 V
Operating Junction Temperature Range T
J
-40 to +150 °C
Operating Ambient Temperature Range T
OPA
-40 to +85
°C
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
CONDITION MIN TYP MAX
UNIT
Supply Voltage
Start-up Current V
CC(ST)
V
CC
= V
UVLO(on)
-1V -- 45 -- μA
Operating Current I
OPA
With 1nF load on out pin -- 2.1 2.6 mA
UVLO(off) V
UVLO(off)
7 8 9 V
UVLO(on) V
UVLO(on)
16 17.5 19 V
OVP Level on V
CC
Pin V
OVP
29 31 33 V
Voltage Feedback
Feedback Reference Voltage V
FB
0.196
0.2 0.204
V
Transconductanc
e
G
M
-- 58 -- μS
Output Sink Current I
O-SINK
-- 5.8 -- μA
Output Source Current I
O-SOURCE
-- 5.8 -- μA
Current Sensing
CS Limit Voltage V
OCP
-- 1.4 -- V
Open Loop Voltage V
OLP
CS Pin Open -- 5 -- V
Leading-Edge Blanking Time LEB
t
-- 400 -- ns
Delay to Output -- 100 -- ns
Switching Frequency
Start Frequency
f
STR
3 4.5 6 kHz
Maximum On Time
T
ON(MAX)
14 -- -- μs
Thermal Section
(Note 5, 6)
Thermal Shutdown
-- 150 -- °C
Thermal Shutdown Release
-- 120 -- °C
TS19721D
Taiwan Semiconductor
Document Number: DS_P0000278 3 Version: A15
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise specified)
PARAMETER SYMBOL
CONDITION MIN
TYP
MAX
UNIT
MOSFET Section
(Note 7)
Drain-Source Breakdown
Voltage
BV
DS
V
GS
= 0V, I
D
= 250µA 600 -- -- V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 600V, V
GS
= 0V -- -- 10 µA
MOSFET Section
(Note 8,9)
Continuous Drain Current I
D
T
C
=25 °C -- -- 2 A
Pulsed Drain Current I
DM
-- -- 8 A
Drain-Source On-Resistance R
DS(ON)
V
GS
= 10V, I
D
= 1A -- -- 4.4 Ω
Single Pulse Avalanche Energy E
AS
V
DD
=50V, I
AS
=2A,
L=25mH, R
G
=25Ω
-- -- 55 mJ
Input Capacitance C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
-- 249 --
pF Output Capacitance C
OSS
-- 30.7 --
Reverse Transfer Capacitance C
RSS
-- 5 --
Turn-On Delay Time t
d(on)
V
GS
= 10V, I
D
= 2A,
V
DD
= 300V, R
G
=25Ω
-- 9.1 --
ns
Turn-On Rise Time t
r
-- 9.8 --
Turn-Off Delay Time t
d(off)
-- 17.4 --
Turn-Off Fall Time t
f
-- 12.4 --
Note:
1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational
sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may
remain possibility to affect device reliability.
2. Devices are ESD sensitive. Handing precaution recommended.
3. Thermal Resistance is specified with the component mounted on a low effective thermal conductivity test board in free air at
T
A
=25°C.
4. The device is not guaranteed to function outside its operating conditions.
5. Guaranteed by design.
6. Auto Recovery Type.
7. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
8. For DESIGN AID ONLY. Limited by maximum junction temperature.
9. Switching time is essentially independent of operating temperature.
P1-P3P4-P6P7-P7

TS19721DCS RLG

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Buy TS19721DCS RLG
Manufacturer:
Taiwan Semiconductor
Description:
LED Lighting Drivers Single-Stage PFC Buck Current Control LED Driver with Mosfet
Lifecycle:
New from this manufacturer.
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