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BDX54B-S

P1-P3P4-P4
BDX54, BDX54A, BDX54B, BDX54C
PNP SILICON POWER DARLINGTONS
1
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with
BDX53, BDX53A, BDX53B and BDX53C
●
60 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum h
FE
of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BDX54
BDX54A
BDX54B
BDX54C
V
CBO
-45
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0)
BDX54
BDX54A
BDX54B
BDX54C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-8 A
Continuous base current I
B
-0.2 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P
tot
60 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P
tot
2W
Operating junction temperature range T
j
-65 to +150 °C
Operating temperature range T
stg
-65 to +150 °C
Operating free-air temperature range T
A
-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BDX54, BDX54A, BDX54B, BDX54C
PNP SILICON POWER DARLINGTONS
2
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -100 mA I
B
= 0 (see Note 3)
BDX54
BDX54A
BDX54B
BDX54C
-45
-60
-80
-100
V
I
CEO
Collector-emitter
cut-off current
V
CE
= -30 V
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
I
B
=0
I
B
=0
I
B
=0
I
B
=0
BDX54
BDX54A
BDX54B
BDX54C
-0.5
-0.5
-0.5
-0.5
mA
I
CBO
Collector cut-off
current
V
CB
= -45 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
I
E
=0
I
E
=0
I
E
=0
I
E
=0
BDX54
BDX54A
BDX54B
BDX54C
-0.2
-0.2
-0.2
-0.2
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
=0 -2 mA
h
FE
Forward current
transfer ratio
V
CE
= -3 V I
C
= -3 A (see Notes 3 and 4) 750
V
BE(sat)
Base-emitter
saturation voltage
I
B
= -12 mA I
C
= -3 A (see Notes 3 and 4) -2.5 V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -12 mA I
C
= -3 A (see Notes 3 and 4) -2 V
V
EC
Parallel diode
forward voltage
I
E
= -3 A I
B
= 0 -2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 2.08 °C/W
R
θJA
Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
on
Tu r n -o n t i m e I
C
= -3 A
V
BE(off)
= 4.2 V
I
B(on)
= -12 mA
R
L
= 10 Ω
I
B(off)
= 12 mA
t
p
= 20 µs, dc ≤ 2%
1µs
t
off
Turn-off time 5µs
OBSOLETE
BDX54, BDX54A, BDX54B, BDX54C
PNP SILICON POWER DARLINGTONS
3
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5 -1·0 -10
h
FE
- Typical DC Current Gain
40000
100
1000
10000
TCS125AG
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
V
CE
= -3 V
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5 -1·0 -10
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
0
TCS125AH
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
t
p
= 300 µs, duty cycle < 2%
I
B
= I
C
/ 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·5 -1·0 -10
V
BE(sat)
- Base-Emitter Saturation Voltage - V
-3·0
-2·0
-2·5
-1·0
-1·5
-0·5
TCS125AI
T
C
= -40°C
T
C
= 25°C
T
C
= 100°C
I
B
= I
C
/ 100
t
p
= 300 µs, duty cycle < 2%
OBSOLETE
P1-P3P4-P4

BDX54B-S

Mfr. #:
Buy BDX54B-S
Manufacturer:
Bourns
Description:
Darlington Transistors 80V 8A PNP
Lifecycle:
New from this manufacturer.
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