AO4455
Symbol Min Typ Max Units
BV
DSS
-30 V
-1
T
J
=55°C -5
±1 µA
±10 µA
V
GS(th)
-1.5 -2.1 -2.6 V
5 6.2
T
J
=125°C 7.2 9
5.7 7.2 mΩ
7.4 9.5 mΩ
g
FS
48 S
V
SD
-0.7 -1 V
I
S
-4.2 A
C
iss
2823 3400 pF
C
oss
574 pF
C
rss
424 600 pF
R
g
2.1 4.0 6.4 Ω
Q
g
54 76 nC
Q
gs
9 nC
Q
gd
16 nC
Reverse Transfer Capacitance
Total Gate Charge
Forward Transconductance
V
DS
=-5V, I
D
=-15A
V
GS
=-6V, I
D
=-10A
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
V
GS
=-10V, I
D
=-15A
I
S
=-1A,V
GS
=0V
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
Gate Drain Charge
SWITCHING PARAMETERS
Gate Source Charge
Drain-Source Breakdown Voltage
I
D
=-250µA, V
GS
=0V
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
V
GS
=-20V, I
D
=-15A
I
GSS
Gate-Body leakage current
µA
Zero Gate Voltage Drain Current
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Output Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=0V, V
GS
=±25V
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 5
t
D(on)
12.5 ns
t
r
12.5 ns
t
D(off)
49 ns
t
f
109 ns
t
rr
22.3 32
ns
Q
rr
8.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
V
GS
=-10V, V
DS
=-15V, R
L
=1.0Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On Rise Time
Turn-On DelayTime
Body Diode Reverse Recovery Charge
I
F
=-15A, dI/dt=100A/µs
I
F
=-15A, dI/dt=100A/µs
Turn-Off DelayTime
Body Diode Reverse Recovery Time
A: The value of R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 5
