RB721Q-40T-77

RB721Q-40

Diodes

Rev.B 1/3

Schottky barrier diode

RB721Q-40

zApplications

Low current rectification

zFeatures

1) Glass sealed envelope. (MSD)

2) Low V

F,

Low I

R

3) High reliability

zConstruction

Silicon epitaxial planar

zExternal dimensions (Unit : mm)

JEDEC : DO-34

ROHM : MSD

29±1 29±1

2.7±0.3

φ0.4±0.1

φ1.8±0.2

CATHODE BAND (BLACK)

TYPE NO. (BLACK)

S

2

-

zTaping specification s (Unit : mm)

A

H2

E

B

C

L2L1

F D

H1

BLUE

BROWN

T-72 52.4±1.5

T-72 5.0±0.5

T-77 5.0±0.3

T-72

T-77

T-72

T-77

T-72 1/2A±1.2

T-77 1/2A±0.4

T-72 0.7 max.

T-77 0.2 max.

T-72

T-77

T-72

T-77

T-72 1.5 max.

T-77 0.4 max.

＊H1(6mm)：BROWN

Ａ

Symbol

Standard dimension

value(mm)

B

C

D

1.0 max.

0

|L1-L2|

H1 6.0±0.5

H2 5.0±0.5

E

Ｆ

T-77 26.0

+0.4

0

zAbsolute maximum ratings (Ta = 25°C)

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forw

F

Junction temperature

Storage temperature

Symbol Unit

V

RM

V

V

R

V

Io mA

I

FSM

mA

Tj

℃

Tstg

℃

Parameter

ard current

Limits

40

30

40

orward current surge peak （60Hz・1cyc） 200

125

-40 to +125

zElectrical characteristics (Ta = 25°C)

Symbol Min. Typ. Max. Unit

orward voltage

V

F

- - 0.37 V

I

F

=1mA

I

R

--0.5µA

V

R

=25V

Ct - 2.0 - pF

V

R

=1V , f=1MHz

Conditions

een terminals

Parameter

F

Capacitance betw

Reverse current

RB721Q-40

Diodes

Rev.B 2/3

z

Electrical characteristic curves

URGE

PEAK S

FORWARD VOLTAGE：VF(mV)

VF-IF CHARACTERISTICS

FORWARD CURRENT:IF(mA)

REVERSE CURRENT:IR(nA)

REVERSE VOLTAGE：VR(V)

VR-IR CHARACTERISTICS

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

REVERSE VOLTAGE:VR(V)

VR-Ct CHARACTERISTICS

VF DISPERSION MAP

FORWARD VOLTAGE:VF(mV)

REVERSE CURRENT:IR(nA)

IR DISPERSION MAP

CAPACITANCE BETWEEN

TERMINALS:Ct(pF)

Ct DISPERSION MAP

IFSM DISRESION MAP

FORWARD CURRENT:IFSM(A)

PEAK SURGE

FORWARD CURRENT:IFSM(A)

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

PEAK SURGE

FORWARD CURRENT:IFSM(A)

TIME:t(ms)

IFSM-t CHARACTERISTICS

TIME:t(s)

Rth-t CHARACTERISTICS

TRANSIENT

THAERMAL IMPEDANCE:Rth (℃/W)

FORWARD POWER

DISSIPATION:Pf(W)

AVERAGE RECTIFIED

FORWARD CURRENT：Io(A)

Io-Pf CHARACTERISTICS

REVERSE POWER

DISSIPATION:P

R

(W)

REVERSE VOLTAGE:VR(V)

VR-P

R

CHARACTERISTICS

0.01

0.1

1

10

100

0 100 200 300 400 500 600 700 800

Ta=-25℃

Ta=125℃

Ta=75℃

Ta=25℃

0.1

1

10

100

1000

10000

100000

0 10203040

Ta=-25℃

Ta=125℃

Ta=25℃

Ta=75℃

0.1

1

10

0102030

f=1MHz

280

290

300

310

320

330

AVE:310.7mV

Ta=25℃

IF=1mA

n=30pcs

0

50

100

150

200

250

300

Ta=25℃

VR=25V

n=30pcs

AVE:54.0nA

0

1

2

3

4

5

6

7

8

9

10

AVE:2.07pF

Ta=25℃

f=1MHz

VR=1V

n=10pcs

0

5

10

15

20

AVE:5.60A

8.3ms

Ifsm

1cyc

0

5

10

110100

8.3ms

Ifsm

1cyc

8.3ms

0

2

4

6

8

10

1 10 100

t

Ifsm

10

100

1000

0.001 0.1 10 1000

Rth(j-a)

Rth(j-c)

Rth(j-l)

1ms

IM=1mA IF=10mA

300us

time

Mounted on epoxy board

0

0.01

0.02

0.03

0.04

0.05

0 0.01 0.02 0.03 0.04 0.05

DC

D=1/2

Sin(θ＝180)

0

0.001

0.002

0.003

0.004

0.005

0 10203040

Sin(θ＝180)

DC

D=1/2

RB721Q-40

Diodes

Rev.B 3/3

IED

CTIF

E RE

ERAG

AV

AMBIENT TEMPERATURE:Ta(℃)

Derating Curveﾞ(Io-Ta)

FORWARD CURRENT:Io(A)

AVERAGE RECTIFIED

FORWARD CURRENT:Io(A)

CASE TEMPARATURE:Tc(℃)

Derating Curveﾞ(Io-Tc)

0

0.02

0.04

0.06

0.08

0.1

0 25 50 75 100 125

T

Tj=125℃

D=t/T

t

VR

Io

VR=20V

0A

0V

Sin(θ＝180)

DC

D=1/2

0

0.02

0.04

0.06

0.08

0.1

0 25 50 75 100 125

T

Tj=125℃

D=t/T

t

VR

Io

VR=20

V

0A

0V

Sin(θ＝180)

DC

D=1/2

RB721Q-40T-77

Mfr. #:

Buy RB721Q-40T-77

Manufacturer:

Description:

DIODE SCHOTTKY 40V 30MA MSD

Lifecycle:

New from this manufacturer.

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