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US6M2TR

P1-P3P4-P4
US6M2
Transistors
Rev.A 1/3
2.5V Drive
Nch+Pch
MOSFET
US6M2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
zPackaging specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
US6M2
TR
3000
Type
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
DSS
Symbol
V
GSS
I
D
I
DP
I
S
I
SP
P
D
°C
Tch
150
°C
Tstg
−55 to +150
Tr1 : Nchannel Tr2 : Pchannel
Limits
Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1
V30
V
A
A
A
A
W / TOTAL
∗2
∗1
12
±1.5
±6
0.6
6
1.0
W / ELEMENT
0.7
−20
−12
±1
±4
−0.4
−4
zThermal resistance
Parameter
°C/W / TOTAL
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
125
°C/W / ELEMENT179
∗ Mounted on a ceramic board
∗
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗2
∗1
∗1
(1)
(6)
(3)
(4)
(2)
(5)
TUMT6
Abbreviated symbol : M02
0.2Max.
US6M2
Transistors
Rev.A 2/3
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
− 10 µAV
GS
=12V, V
DS
=0V
V
DD
15V, V
GS
= 4.5V
30 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 30V, V
GS
=0V
0.5 − 1.5 V V
DS
= 10V, I
D
= 1mA
− 170 240 I
D
= 1.5A, V
GS
= 4.5V
− 180 250 mΩ
mΩ
mΩ
I
D
= 1.5A, V
GS
= 4V
− 240 340 I
D
= 1.5A, V
GS
= 2.5V
1.5 −−SV
DS
= 10V, I
D
= 1.5A
− 80 − pF V
DS
= 10V
− 13
12
− pF V
GS
=0V
−
7
− pF f=1MHz
−
9
− ns
−
15
− ns
−
6
− ns
−
1.6
− ns
−
0.5
2.2 nC
−
0.3
− nC I
D
= 1.5A
−−nC R
L
= 10Ω, R
G
= 10Ω
VDD 15V
I
D
= 0.75A
V
GS
= 4.5V
R
L
= 20Ω
R
G
=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−1.2 V I
S
= 0.6A, V
GS
=0VForward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
US6M2
Transistors
Rev.A 3/3
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
− 10 µAV
GS
= −12V, V
DS
=0V
V
DD
−15V, V
GS
= −4.5V
−20 −−VI
D
= −1mA, V
GS
=0V
−−−1 µAV
DS
= −20V, V
GS
=0V
−0.7 −−2.0 V V
DS
= −10V, I
D
= −1mA
− 280 390 I
D
= −1A, V
GS
= −4.5V
− 310 430 mΩ
mΩ
mΩ
I
D
= −1A, V
GS
= −4V
− 570 800 I
D
= −0.5A, V
GS
= −2.5V
0.7 −−SV
DS
= −10V, I
D
= −0.5A
− 150 − pF V
DS
= −10V
− 20
20
− pF V
GS
= 0V
−
9
− pF f=1MHz
−
8
− ns
−
25
− ns
−
10
− ns
−
2.1
− ns
−
0.5
− nC
−
0.5
− nC I
D
= −1A
−−nC R
L
= 15Ω, R
G
= 10Ω
VDD −15V
I
D
= −0.5A
V
GS
= −4.5V
R
L
= 30Ω
R
G
= 10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
V
SD
−−−1.2 V I
S
= −0.4A, V
GS
=0VForward voltage
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
P1-P3P4-P4

US6M2TR

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Description:
MOSFET N+P 20V 1.5A/1A
Lifecycle:
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