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MM3Z36VT1

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 7
1 Publication Order Number:
MM3Z2V4T1/D
MM3Z2V4T1 SERIES
Zener Voltage Regulators
200 mW SOD−323 Surface Mount
This series of Zener diodes is packaged in a SOD−323 surface
mount package that has a power dissipation of 200 mW. They are
designed to provide voltage regulation protection and are especially
attractive in situations where space is at a premium. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features:
• Standard Zener Breakdown Voltage Range − 2.4 V to 75 V
• Steady State Power Rating of 200 mW
• Small Body Outline Dimensions:
0.067” x 0.049” (1.7 mm x 1.25 mm)
• Low Body Height: 0.035” (0.9 mm)
• Package Weight: 4.507 mg/Unit
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, Transfer-Molded Plastic
FINISH: All External Surfaces are Corrosion Resistant
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Plated with Pb−Sn or Sn Only (Pb−Free)
POLARITY: Cathode Indicated by Polarity Band
FLAMMABILITY RATING: UL 94 V−0
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) @ T
A
= 25°C
Derate above 25°C
P
D
200
1.5
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 Minimum Pad
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 o
f
this data sheet.
DEVICE MARKING INFORMATION
Device Package Shipping†
ORDERING INFORMATION
MM3ZxxxT1 SOD−323 3000/Tape & Reel
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MM3ZxxxT1G SOD−323
(Pb−Free)
3000/Tape & Reel
http://onsemi.com
SOD−323
CASE 477
STYLE 1
(Note: Microdot may be in either location)
1
2
xx G
G
M
*Date Code orientation may vary depending
upon manufacturing location.
xx = Specific Device Code
M = Date Code*
G = Pb−Free Package
Zener Voltage Regulator
I
F
V
I
I
R
I
ZT
V
R
V
Z
V
F
MM3Z2V4T1 SERIES
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Symbol Parameter
V
Z
Reverse Zener Voltage @ I
ZT
I
ZT
Reverse Current
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
I
R
Reverse Leakage Current @ V
R
V
R
Reverse Voltage
I
F
Forward Current
V
F
Forward Voltage @ I
F
QV
Z
Maximum Temperature Coefficient of V
Z
C Max. Capacitance @V
R
= 0 and f = 1 MHz
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA for all types)
Device*
Device
Marking
Zener Voltage (Note 2) Zener Impedance Leakage Current
QV
Z
(mV/k)
@ I
ZT
C
@ V
R
= 0
f = 1 MHz
V
Z
(Volts) @ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
Min Nom Max mA
W W
mA
mA
Volts Min Max pF
MM3Z2V4T1, G 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 −3.5 0 450
MM3Z2V7T1, G 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 −3.5 0 450
MM3Z3V0T1, G 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 −3.5 0 450
MM3Z3V3T1, G 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 −3.5 0 450
MM3Z3V6T1, G 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 −3.5 0 450
MM3Z3V9T1, G 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 −3.5 −2.5 450
MM3Z4V3T1, G 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 −3.5 0 450
MM3Z4V7T1, G 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 −3.5 0.2 260
MM3Z5V1T1, G 0A 4.8 5.1 5.4 5 60 500 0.5 2 2.0 −2.7 1.2 225
MM3Z5V6T1, G 0C 5.2 5.6 6.0 5 40 200 0.5 1 2.0 −2.0 2.5 200
MM3Z6V2T1, G 0E 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185
MM3Z6V8T1, G 0F 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155
MM3Z7V5T1, G 0G 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140
MM3Z8V2T1, G 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135
MM3Z9V1T1, G 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130
MM3Z10VT1, G 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130
MM3Z11VT1, G 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130
MM3Z12VT1, G 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130
MM3Z13VT1, G 0P 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120
MM3Z15VT1, G 0T 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110
MM3Z16VT1, G 0U 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105
MM3Z18VT1, G 0W 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100
MM3Z20VT1, G 0Z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85
MM3Z22VT1, G 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85
MM3Z24VT1, G 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80
MM3Z27VT1, G 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70
MM3Z30VT1, G 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70
MM3Z33VT1, G 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70
MM3Z36VT1, G 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70
MM3Z39VT1, G 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45
MM3Z43VT1, G 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40
MM3Z47VT1, G 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40
MM3Z51VT1, G 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40
MM3Z56VT1, G 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40
MM3Z62VT1 1E 58 62 66 2 215 500 0.5 0.05 43.4 58.8 71.6 35
MM3Z68VT1, G 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35
MM3Z75VT1, G 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35
*The “G’’ suffix indicates Pb−Free package available.
2. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
MM3Z2V4T1 SERIES
http://onsemi.com
3
TYPICAL CHARACTERISTICS
80
V
Z
, NOMINAL ZENER VOLTAGE
Figure 1. Effect of Zener Voltage on Zener Impedance
103.0
Z
ZT
, DYNAMIC IMPEDANCE ( )
Ω
1000
100
10
1.0
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
I
Z
= 1 mA
5 mA
V
F
, FORWARD VOLTAGE (V)
Figure 2. Typical Forward Voltage
1.
2
1.11.00.90.80.70.60.50.4
I
F
, FORWARD CURRENT (mA)
1000
100
10
1.0
150°C
75°C 25°C 0°C
C, CAPACITANCE (pF)
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 3. Typical Capacitance
1000
100
10
1.0
104.0
BIAS AT
50% OF V
Z
NOM
T
A
= 25°C
0 V BIAS 1 V BIAS
I
R
, LEAKAGE CURRENT ( A)μ
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
1000
100
10
1.0
0.1
0.01
0.001
0.0001
0.00001
7
0
6050403020100
+150°C
+25°C
−55°C
P1-P3P4-P5

MM3Z36VT1

Mfr. #:
Buy MM3Z36VT1
Manufacturer:
ON Semiconductor
Description:
Zener Diodes 36V 200mW
Lifecycle:
New from this manufacturer.
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