NGTB40N120L3WG
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7
TYPICAL CHARACTERISTICS
Figure 19. Reverse Bias Safe Operating Area Figure 20. t
rr
vs. di
F
/dt
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
di
F
/dt, DIODE CURRENT SLOPE (A/ms)
1000100101
100
1000
900700500300100
350
Figure 21. Q
rr
vs. di
F
/dt Figure 22. I
rm
vs. di
F
/dt
di
F
/dt, DIODE CURRENT SLOPE (A/ms) di
F
/dt, DIODE CURRENT SLOPE (A/ms)
900700500300100
0
1.0
3.5
1100100
0
10
30
50
Figure 23. V
F
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
12525−25−75
1.0
3.0
4.0
4.5
I
C
, COLLECTOR CURRENT (A)
t
rr
, REVERSE RECOVERY TIME (ns)
Q
rr
, REVERSE RECOVERY CHARGE (mC)
I
rm
, REVERSE RECOVERY CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
10,000 1100
1100
1
250
150
50
0
10
0.5
2.0
1.5
3.0
300 500 700 900
2.0
1.5
V
GE
= 15 V, T
C
= 175°C
100
200
300
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
T
J
= 175°C, I
F
= 40 A
T
J
= 25°C, I
F
= 40 A
2.5
20
40
75 1751000−50 50 150 200
2.5
3.5
I
F
= 40 A
I
F
= 75 A
I
F
= 20 A
V
R
= 400 V
V
R
= 400 V
V
R
= 400 V
