RJH60D1DPP-E0 Preliminary
R07DS0893EJ0100 Rev.1.00 Page 2 of 9
Nov 01, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to emitter breakdown
voltage
V
BR(CES)
600 — — V I
C
=10 A, V
GE
= 0
Zero gate voltage collector current
/ Diode reverse current
I
CES
/ I
R
— — 5 A V
CE
= 600 V, V
GE
= 0
Gate to emitter leak current I
GES
— — ±1 A V
GE
= ±30 V, V
CE
= 0
Gate to emitter cutoff voltage V
GE(off)
4.0 — 6.0 V V
CE
= 10 V, I
C
= 1 mA
V
CE(sat)
— 1.9 2.5 V I
C
= 10 A, V
GE
= 15 V
Note3
Collector to emitter saturation voltage
V
CE(sat)
— 2.6 — V I
C
= 20 A, V
GE
= 15 V
Note3
Input capacitance Cies — 275 — pF
Output capacitance Coes — 25 — pF
Reveres transfer capacitance Cres — 8 — pF
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
Total gate charge Qg — 13 — nC
Gate to emitter charge Qge — 3 — nC
Gate to collector charge Qgc — 5 — nC
V
GE
= 15 V
V
CE
= 300 V
I
C
= 10 A
Turn-on delay time t
d(on)
— 30 — ns
Rise time t
r
— 13 — ns
Turn-off delay time t
d(off)
— 42 — ns
Fall time t
f
— 75 — ns
Turn-on energy E
on
— 0.10 — mJ
Turn-off energy E
off
— 0.13 — mJ
Total switching energy E
total
— 0.23 — mJ
V
CC
= 300 V
V
GE
= 15 V
I
C
= 10 A
Rg = 5
(Inductive load)
Short circuit withstand time t
sc
3.0 5.0 — s V
GE
360 V, V
GE
= 15 V
FRD forward voltage V
F
— 1.4 1.9 V I
F
= 10 A
Note3
FRD reverse recovery time t
rr
— 70 — ns
FRD reverse recovery charge Q
rr
— 0.11 — C
FRD peak reverse recovery current I
rr
— 3.5 — A
I
F
= 10 A
di
F
/dt = 100 A/s
Notes: 3. Pulse test.
