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FMEN-430A

P1-P3P4-P5
SANKEN ELECTRIC CO., LTD. FMEN-430A
050510
1／5
61426-01
1. Scope
The present specifications shall apply to an FMEN-430A.
2. Outline
Type
Silicon Schottky Barrier Diode
Structure
Resin Molded
Applications
High Frequency Rectification
3. Flammability
UL94V-0(Equivalent)
SANKEN ELECTRIC CO., LTD. FMEN-430A
050510
2／5
61426-01
4. Absolute maximum ratings
No.
Item
Symbol
Unit
Conditions
1
Transient Peak Reverse Voltage
V
RSM
V
2
Peak Reverse Voltage
V
RM
V
3
Average Forward Current
I
F(AV)
A
Refer to Derating of 7
4
Peak Surge Forward Current
I
FSM
A
10msec.
Half sinewave, one shot
5
I
2
t Limiting Value
I
2
t
A
2
s
1msec≤t≤10msec
6
Junction Temperature
T
j
°C
7
Storage Temperature
T
stg
°C
No.1,2,4&5 show ratings per one chip.
5. Electrical characteristics (Ta=25°C ，unless otherwise specified)
No
Item
Symbol
Unit
Value
Conditions
1
Forward Voltage Drop
V
F
V
0.85 max.
I
F
=15A
2
Reverse Leakage Current
I
R
uA
300 max.
V
R
=V
RM
3
Reverse Leakage Current Under
High Temperature
H･I
R
mA
150 max.
V
R
=V
RM
, T
j
=150°C
4
Thermal Resistance
R
th(j-c)
°C /W
2.0 max.
Between Junction and case
No.1,2&3 show characteristics per one chip.
SANKEN ELECTRIC CO., LTD. FMEN-430A
050510
3／5
61426-01
6. Characteristics
I
F(AV)
- P
F
P
F
(W)
Forward Power Dissipation (W)
I
F(AV)
(A)
Average Forward Current (A)
V
R
- P
R
P
R
(W)
Reverse Power Dissipation (W)
V
R
(V)
Reverse Voltage (V)
0
5
10
15
20
25
0 20 40 60 80 100
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
Tj=150°C
t
T
t/T=1/6
Tj=150°C
t
T
1-t/T=5/6
sinewave
1-t/T=2/3
1-t/T=1/2
DC
t/T=1/2
t/T=1/3,sinewave
P1-P3P4-P5

FMEN-430A

Mfr. #:
Buy FMEN-430A
Manufacturer:
Description:
DIODE ARRAY SCHOTTKY 100V TO3PF
Lifecycle:
New from this manufacturer.
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