ZTX658 Datasheet ZTX658, ZTX658STZ, ZTX658STOA | P1-P3

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 – APRIL 2002

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

*P

tot

=1 Watt

APPLICATIONS

* Telephone dialler circuits

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

400 V

Collector-Emitter Voltage V

CEO

400 V

Emitter-Base Voltage V

EBO

5V

Peak Pulse Current I

CM

1A

Continuous Collector Current I

C

500 mA

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

400 V

I

C

=100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO)

400 V I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5V

I

E

=100µA

Collector Cut-Off

Current

I

CBO

100 nA V

CB

=320V

Collector Cut-Off

Current

I

CBO

100 nA V

CE

=320V

Emitter Cut-Off Current I

EBO

100 nA V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.3

0.25

0.5

V

I

C

=20mA, I

B

=1mA

I

C

=50mA, I

B

=5mA*

I

C

=100mA, I

B

=10mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9 V I

C

=100mA, I

B

=10mA*

Base-Emitter

Turn On Voltage

V

BE(on)

0.9 V IC=100mA, V

CE

=5V*

Static Forward Current

Transfer Ratio

h

FE

50

40

I

C

=1mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=200mA, V

CE

=10V*

E-Line

TO92 Compatible

3-229

ZTX658

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

50 MHz I

C

=20mA, V

CE

=20V

f=20MHz

Output capcitance C

obo

10 pF V

CB

=20V, f=1MHz

Switching times t

on

t

off

130

3300

ns

I

C

=100mA, V

C

=100V

I

B1

=10mA, I

B2

=-20mA

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

th(j-amb)2

†

R

th(j-case)

175

116

70

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

C

B

E

-40 0.0001

Derating curve

T

-Temperature (°C)

M

ax Po

w

e

r

D

is

sipat

i

o

n

-

(

W

a

tts)

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01-20 0 20

40 60 80 100 120 200180160140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t

1

t

P

D=t

1

/t

P

1.0

0.5

2.0

1.5

Case temperature

2.5

A

m

bient tem

perat

u

re

0

D=1 (D.C.)

3-230

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 – APRIL 2002

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

*P

tot

=1 Watt

APPLICATIONS

* Telephone dialler circuits

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

400 V

Collector-Emitter Voltage V

CEO

400 V

Emitter-Base Voltage V

EBO

5V

Peak Pulse Current I

CM

1A

Continuous Collector Current I

C

500 mA

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

400 V

I

C

=100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO)

400 V I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5V

I

E

=100µA

Collector Cut-Off

Current

I

CBO

100 nA V

CB

=320V

Collector Cut-Off

Current

I

CBO

100 nA V

CE

=320V

Emitter Cut-Off Current I

EBO

100 nA V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.3

0.25

0.5

V

I

C

=20mA, I

B

=1mA

I

C

=50mA, I

B

=5mA*

I

C

=100mA, I

B

=10mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9 V I

C

=100mA, I

B

=10mA*

Base-Emitter

Turn On Voltage

V

BE(on)

0.9 V IC=100mA, V

CE

=5V*

Static Forward Current

Transfer Ratio

h

FE

50

40

I

C

=1mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V*

I

C

=200mA, V

CE

=10V*

E-Line

TO92 Compatible

3-229

ZTX658

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

50 MHz I

C

=20mA, V

CE

=20V

f=20MHz

Output capcitance C

obo

10 pF V

CB

=20V, f=1MHz

Switching times t

on

t

off

130

3300

ns

I

C

=100mA, V

C

=100V

I

B1

=10mA, I

B2

=-20mA

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

th(j-amb)2

†

R

th(j-case)

175

116

70

°C/W

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

C

B

E

-40 0.0001

Derating curve

T

-Temperature (°C)

M

ax Po

w

e

r

D

is

sipat

i

o

n

-

(

W

a

tts)

Maximum transient thermal impedance

Pulse Width (seconds)

Thermal Resistance (°C/W)

10 10010.10.01-20 0 20

40 60 80 100 120 200180160140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t

1

t

P

D=t

1

/t

P

1.0

0.5

2.0

1.5

Case temperature

2.5

A

m

bient tem

perat

u

re

0

D=1 (D.C.)

3-230

ZTX658

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

CE

(

s

at

)

- (V

olts)

T

amb

=25°C

V

CE(sat)

v I

C

I

C

- Collector Current (Amps)

V

C

E

(s

at)

-

(

V

olts)

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

I

C

- Collector Current (Amps) I

C

- Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

V

BE

(

s

at

)

- (V

olts)

V

B

E

-

(

V

olts)

I

C

-

C

o

l

le

c

to

r

C

urrent (Amps)

I

C

/I

B

=50

I

C

/I

B

=10

V

CE

=10V

V

CE

=10V

300

200

100

V

CE

-

Collector Voltage (Volts)

Safe Operating Area

100110

0.001

0.01

0.1

1.0

Single Pulse Test at T

amb

=25°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.001

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

I

C

/I

B

=10

0.001

I

C

/I

B

=20

0.01 0.1 20110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

I

C

/I

B

=10

0.001

1000

h

F

E

- No

r

ma

l

ised

Ga

i

n

h

F

E

-

T

yp

i

cal ga

in

3-231

ZTX658

ZTX658

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