TC75S58F,LF Datasheet TC75S58F,LF, TC75S58FUTE85LF | P1-P3

TC75S58F/FU/FE

2014-03-01

1

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TC75S58F, TC75S58FU, TC75S58FE

Single Comparator

The TC75S58F/TC75S58FU/TC75S58FE is a CMOS general-

purpose single comparator. The device can operate off a single

power supply and draws a lower supply current than a

conventional bipolar general-purpose comparator. This device’s

open-drain output stage can be wire-ORed with those of other

open-drain output circuits.

Features

• Low-current power supply : I

DD

= 10 μA (typ.)

• Single power supply operation

• Wide common mode input voltage range : V

SS

to V

DD

− 0.9 V

• Open drain output circuit

• Low input bias current

• Small package

Marking

(top view)

Pin Connection

(top view)

TC75S58F

TC75S58FU

TC75S58FE

Weight

SSOP5-P-0.95 : 0.014 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

SON5-P-0.50 : 0.003 g (typ.)

T E

4 5

3 1 2

V

DD

5

IN (+)

4

1 3

V

SS

2

OUT

IN (−)

Start of commercial production

1997-02

TC75S58F/FU/FE

2014-03-01

2

Absolute Maximum Ratings

(Ta

=

25°C)

Characteristics Symbol Rating Unit

Supply voltage V

DD

, V

SS

±3.5 or 7 V

Differential input voltage DV

IN

±7 V

Input voltage V

IN

V

SS

to V

DD

V

Output current I

O

±35 mA

TC75S58F/FU

200

Power dissipation

TC75S58FE

P

D

100

mW

Operating temperature T

opr

−40 to 85 °C

Storage temperature T

stg

−55 to 125 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following

precautions:

• Ensure that no I/O pin’s voltage level ever exceeds V

DD

or drops below V

SS

.

In addition, check the power-on timing.

• Do not subject the device to excessive noise.

TC75S58F/FU/FE

2014-03-01

3

Electrical Characteristics

(V

DD

=

5 V, V

SS

=

GND, Ta

=

25°C)

Characteristics Symbol

Test

Circuit

Test Condition Min Typ. Max Unit

Input offset voltage V

IO

⎯ ⎯ ⎯ ±1 ±7 mV

Input offset current I

IO

⎯ ⎯ ⎯ 1 ⎯ pA

Input bias current I

I

⎯ ⎯ ⎯ 1 ⎯ pA

Common mode input voltage CMV

IN

⎯ ⎯ 0 ⎯ 4.1 V

Supply current I

DD

(Note) ⎯ ⎯ ⎯ 11 22 μA

Voltage gain G

V

⎯ ⎯ ⎯ 94 ⎯ dB

Sink current I

sink

⎯ V

OL

= 0.5 V 13 25 ⎯ mA

Output leak current I

LEAK

⎯ V

O

= 5 V ⎯ 5 ⎯ nA

Output voltage V

OL

⎯ I

sink

= 5.0 mA ⎯ 0.1 0.3 V

Operating supply voltage V

DD

⎯ ⎯ 1.8 ⎯ 7.0 V

t

PLH (1)

⎯ Over drive = 100 mV ⎯ 800 ⎯

Propagation delay time (turn on)

t

PLH (2)

⎯ TTL step input ⎯ 620 ⎯

ns

t

PHL (1)

⎯ Over drive = 100 mV ⎯ 230 ⎯

Propagation delay time (turn off)

t

PHL (2)

⎯

TTL step input ⎯ 350 ⎯

ns

t

TLH

⎯

Over drive = 100 mV ⎯ 190 ⎯

Response time

t

THL

⎯

Over drive = 100 mV ⎯ 6 ⎯

ns

Electrical Characteristics

(V

DD

=

3 V, V

SS

=

GND, Ta

=

25°C)

Characteristics Symbol

Test

Circuit

Test Condition Min Typ. Max Unit

Input offset voltage V

IO

⎯ ⎯ ⎯ ±1 ±7 mV

Input offset current I

IO

⎯ ⎯ ⎯ 1 ⎯ pA

Input bias current I

I

⎯ ⎯ ⎯ 1 ⎯ pA

Common mode input voltage CMV

IN

⎯ ⎯ 0 ⎯ 2.1 V

Supply current I

DD

(Note) ⎯ ⎯ ⎯ 10 20 μA

Sink current I

sink

⎯ V

OL

= 0.5 V 6 18 ⎯ mA

Output leak current I

LEAK

⎯ V

O

= 3 V ⎯ 5 ⎯ nA

Output voltage V

OL

⎯ I

sink

= 5.0 mA ⎯ 0.15 0.35 V

Propagation delay time (turn on) t

PLH

⎯ Over drive = 100 mV ⎯ 590 ⎯ ns

Propagation delay time (turn off) t

PHL

⎯ Over drive = 100 mV ⎯ 230 ⎯ ns

t

TLH

⎯

Over drive = 100 mV ⎯ 170 ⎯

Response time

t

THL

⎯

Over drive = 100 mV ⎯ 5 ⎯

ns

Note: This device’s current consumption increases as its operating frequency increases. Note that the power

dissipation should not exceed the allowable power dissipation.

TC75S58F,LF

TC75S58F,LF

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